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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching process
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Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching process

机译：两步刻蚀工艺对Ag-Si纳米结构中Ag纳米形状和AgGa相的影响

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摘要

The etching scale was controled by the layball process and a focus ion beam (FIB) was used to investige the dry-wet etching (DWE) mechanism. Increasing the beam current of dry-etching raised the height of nano prominent structures, but deteriorated the interface of Ag/Si film, and even damaged the Ag film because of Ga~+ bombardment. Regardless of the Ag nanoshape deposition, the residual Ag films were doped with Ga~+ and were sensitive to DWE. After wet-etching, the nano hollow formed and the Ag films sunk. However, AgGa sidewall films formed by the concentration gradient and the oxidative potential and this increased the volume of microporous phases, resulting in a reduction in the depth. Also, 15-30 nm Ag nano-particles were able to enhance the DWE mechanism in the Ag/Si nanostructures.
机译：刻蚀的规模是通过打球工艺控制的，聚焦离子束（FIB）用于研究干湿刻蚀（DWE）的机理。增加干法刻蚀的束流，会提高纳米突出结构的高度，但会破坏Ag / Si膜的界面，甚至会因Ga〜+轰击而损坏Ag膜。不管Ag纳米形状的沉积如何，残留的Ag膜都掺杂有Ga〜+，并且对DWE敏感。湿法刻蚀后，形成了纳米空心，并且Ag膜下沉。然而，AgGa侧壁膜是由浓度梯度和氧化电位形成的，这增加了微孔相的体积，导致深度的减小。同样，15-30 nm Ag纳米颗粒能够增强Ag / Si纳米结构中的DWE机制。

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