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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Single crystalline InAs_xSb_(1-x) films with cut-off wavelength of 7-8 μm grown on (100) InSb substrates by liquid phase epitaxy
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Single crystalline InAs_xSb_(1-x) films with cut-off wavelength of 7-8 μm grown on (100) InSb substrates by liquid phase epitaxy

机译：通过液相外延在（100）InSb衬底上生长的截止波长为7-8μm的InAs_xSb_（1-x）单晶膜

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摘要

InAs_xSb_91-x) single crystalline films with x from 0.02 to 0.05 have been successfully grown on (100) InSb substrates by liquid phase epitaxy without a buffer layer. High-resolution X-ray diffraction (HRXRD) was used to characterize the crystal quality of the films. The full-width at half-maximum (FWHM) of the (400) rocking curve (RC) line ranged from 157.96 to 417.02 arcsec, revealing that the films are good single crystals with (100) surface orientation. Composition of the films was analyzed by energy dispersive X-ray analysis (EDXA) and HRXRD using Vegard's law. The surface microstructures and morphologies of the films were characterized by scanning electronic microscopy (SEM) and optical microscopy. Optical properties were characterized by Fourier transform infrared (FTIR) transmission spectrum. A cut-off wavelength of 8.06 μm at x = 0.05, indicates the potential applications of the material for long-wavelength infrared detectors.
机译：具有x从0.02到0.05的InAs_xSb_91-x）单晶膜已通过液相外延成功地在（100）InSb衬底上生长而没有缓冲层。高分辨率X射线衍射（HRXRD）用于表征薄膜的晶体质量。 （400）摇摆曲线（RC）线的半峰全宽（FWHM）介于157.96至417.02 arcsec之间，这表明薄膜是具有（100）表面取向的良好单晶。使用Vegard定律通过能量色散X射线分析（EDXA）和HRXRD分析膜的组成。通过扫描电子显微镜（SEM）和光学显微镜对薄膜的表面微观结构和形貌进行表征。光学性质通过傅立叶变换红外（FTIR）透射光谱进行表征。 x = 0.05时8.06μm的截止波长表明该材料在长波长红外探测器中的潜在应用。

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