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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Amorphous-nanocrystalline Al doped ZnO transparent conducting thin films
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Amorphous-nanocrystalline Al doped ZnO transparent conducting thin films

机译：非晶纳米晶掺杂Al的ZnO透明导电薄膜

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摘要

Al-doped ZnO films have been deposited at room temperature by means of RF sputtering under different conditions and subjected to annealing treatments looking for amorphous Transparent Conducting Oxide (TCO) films in the search for their integration into the emergingarea of the flexible electronics. Structural studies have been performed as well as optical and electrical characterization. Spectroscopic ellipsometry has been used for the determination of the optical gap for films grown on Si and the films thickness. The amorphous fraction of the films (up to 86%) depends on the substrate and RF power but not on the annealing temperature up to 600°C for glass substrates. The resistivity is found to be independent of the amorphous degree and correlates to the optical bandgap which presents three regimes depending on the annealing temperature.
机译：掺铝的ZnO薄膜已经在室温下通过RF溅射在不同条件下沉积，并经过退火处理以寻找非晶态透明导电氧化物（TCO）薄膜，以寻求将其整合到柔性电子器件的新兴区域中的方法。已经进行了结构研究以及光学和电学表征。椭圆偏振光谱法已经用于确定在Si上生长的膜的光学间隙和膜厚度。薄膜的无定形部分（最多86％）取决于基板和RF功率，但不取决于玻璃基板的最高600°C的退火温度。发现电阻率与非晶度无关，并且与根据退火温度呈现三种状态的光学带隙相关。

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