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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Tungsten-doped vanadium dioxide thin films on borosilicate glass for smart window application
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Tungsten-doped vanadium dioxide thin films on borosilicate glass for smart window application

机译：硼硅玻璃上掺钨的二氧化钒薄膜，用于智能窗户应用

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摘要

Tungsten-doped VO_2 (W-VO_2) thin Alms with low metal-semiconductor transition temperature (Tt) of 34 °C were grown on borosilicate glass substrates by reactive ion beam sputtering at room-temperature (RT) followed by a post annealing process. In order to investigate the thermal process effect, four samples S1-S4 were annealed at different temperatures of 490, 530, 570 and 610 °C, respectively. X-ray photo-electron spectroscope and Raman measurements demonstrate that the tungsten atoms have been successfully doped into VO_2 films. Unlike VO_2 thin films which should be annealed at critical temperature, well crystallized W-VO_2 films can be annealed in a wide temperature range, i.e. 530-570 °C, as revealed by both electrical and optical property investigations. Besides, the infrared (IR) transmittance measured below/above T_t illustrates that W-VO_2 films possess excellent switching efficiency, i.e. 33% at 2500 nm for S3. Above all, the near RT phase transition, RT deposition, easy control of annealing process and high IR switching efficiency make the W-VO_2 thin film a promising material for application of smart windows.
机译：通过在室温（RT）下进行反应离子束溅射，然后在后退火工艺中，将具有低金属-半导体转变温度（Tt）为34°C的掺杂钨的VO_2（W-VO_2）薄铝箔生长在硼硅玻璃基板上。为了研究热过程的影响，分别在490、530、570和610°C的不同温度下对四个样品S1-S4进行了退火。 X射线光电子能谱仪和拉曼光谱测试表明，钨原子已成功掺杂到VO_2薄膜中。与应在临界温度下退火的VO_2薄膜不同，结晶良好的W-VO_2薄膜可以在很宽的温度范围内（即530-570°C）进行退火，这从电学和光学性能研究中都可以看出。此外，在T_t以下/以上测量的红外（IR）透射率表明，W-VO_2膜具有优异的转换效率，即对于S3在2500nm下为33％。最重要的是，接近RT的相变，RT沉积，易于控制的退火工艺以及高的IR转换效率，使得W-VO_2薄膜成为智能窗应用的有前途的材料。

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