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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Strain dependence of the physical properties of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 substrates
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Strain dependence of the physical properties of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 substrates

机译：LaAlO3衬底上生长的外延La0.7Ca0.3MnO3薄膜的物理性能的应变依赖性

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摘要

We present a systematic study of the structural, magnetic, electrical and magnetoresistive properties of La0.7Ca0.3MnO3 thin films epitaxially grown on LaAlO3 single crystalline substrates using metal organic deposition process. The evolutions of the lattice parameters and the corresponding strain as a function of the film thickness (20-80 nm) have been investigated using X-ray diffraction measurements. The films were found to be totally relaxed for a thickness around 60 nm. Magnetization and resistance measurements as a function of temperature revealed a direct correlation of the transition temperature from a ferromagnetic state to the paramagnetic state with the film thickness. The temperature dependence of the resistivity (rho (T) has been fitted using various theoretical approaches. Below the transition temperature (T-P) the rho (T) graphs were well fitted using the rho(T) = rho(0) + AT(alpha) formula, in which the fitting parameters rho(0) and alpha have been used to clarify the conduction mechanism. Above T-P, the rho (T) graphs were found to be well fitted using different models including the VRH model and the small polaron model. A magnetoresistance of 91% was measured at 248 K for the for 60 nm thick film under an applied magnetic field of 7 T. As well as a non-volatile resistive switching capacity of 15% on Ag contacts deposited on top of this film. (C) 2015 Elsevier B.V. All rights reserved.
机译：我们对使用金属有机沉积工艺在LaAlO3单晶衬底上外延生长的La0.7Ca0.3MnO3薄膜的结构，磁，电和磁阻特性进行了系统的研究。使用X射线衍射测量研究了晶格参数和相应应变随膜厚（20-80 nm）的变化。发现该膜对于约60nm的厚度是完全松弛的。磁化和电阻测量随温度的变化揭示了从铁磁态到顺磁态的转变温度与膜厚直接相关。电阻率（rho（T））的温度依赖性已通过各种理论方法拟合，在转变温度（TP）以下，rho（T）图通过rho（T）= rho（0）+ AT（alpha）拟合得很好）公式，其中使用了拟合参数rho（0）和alpha来阐明传导机理，在TP之上，使用不同的模型（包括VRH模型和小极化子模型），都可以很好地拟合rho（T）图对于厚度为60 nm的薄膜，在248 K下在7 T的磁场下测得的磁阻为91％，而沉积在该薄膜顶部的Ag触点的非易失性电阻开关容量为15％。 （C）2015 Elsevier BV保留所有权利。

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