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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method
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Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method

机译：退火温度对溅射法制备的Cu2SnS3（CTS）薄膜的性能和太阳能电池性能的影响

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摘要

Highly crystallized Cu2SnS3 (CTS) thin films are synthesized by sputtering based deposition route. Further, Influence of different annealing temperatures on crystallographic, electrical and optical properties of CTS thin films have been investigated. The synthesized CTS thin films are grown as a monoclinic structure observed from X-ray diffraction (XRD) of (112), (220), and (312) plane and it is further confirmed using Raman spectroscopy by the presence of Raman peaks at 295 and 354 cm(-1). The direct band gap energy of CTS thin film annealed at 580 degrees C is found to be 1.03 eV by extrapolation from external quantum efficiency (EQE) measurement. An X-ray photoelectron spectroscopy (XPS) study suggests that the ionic states of Cu, Sn, and S are Cu+, Sn4+, and S2+, respectively. The CTS based thin film solar cells (TFSCs) are fabricated with a structure of Mo/CTS/CdS/i-ZnO/AZO/Al. The preliminary power conversion efficiency of 1.35% with a short circuit current density of 28.3 mA/cm(2), an open circuit voltage of 147.5 mV, and a fill factor of 32% were obtained, although the processing parameters have not yet been optimized. (C) 2016 Elsevier B.V. All rights reserved.
机译：通过基于溅射的沉积路径合成高度结晶的Cu2SnS3（CTS）薄膜。此外，已经研究了不同退火温度对CTS薄膜的晶体学，电学和光学性质的影响。从（112），（220）和（312）平面的X射线衍射（XRD）观察，合成的CTS薄膜以单斜晶结构生长，并且使用拉曼光谱进一步证实了295处拉曼峰的存在和354厘米（-1）。通过外部量子效率（EQE）测量外推，发现在580℃退火的CTS薄膜的直接带隙能为1.03 eV。 X射线光电子能谱（XPS）研究表明，Cu，Sn和S的离子态分别为Cu +，Sn4 +和S2 +。基于CTS的薄膜太阳能电池（TFSC）的结构为Mo / CTS / CdS / i-ZnO / AZO / Al。尽管尚未优化处理参数，但初步功率转换效率为1.35％，短路电流密度为28.3 mA / cm（2），开路电压为147.5 mV，填充系数为32％。 。 （C）2016 Elsevier B.V.保留所有权利。

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