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Suboxides at the Si/SiO2 interface: a Si2p core level study with synchrotron radiation

机译:Si / SiO2界面处的次氧化物:采用同步辐射的Si2p核心能级研究

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摘要

Synchrotron radiation X-ray photoemission spectroscopy (SRXPS), used with an optimized surface and interface sensitivity, is a unique tool to determine the chemical composition and spatial extension of the suboxide layer present at the Si/SiO2 interface. The bonding at 'thermal interfaces' appear to be essentially dependent on the Si crystal orientation. For Si(001)/SiO2 a detailed photon energy-dependent and angle-dependent SRXPS study (in the 120 divided by 175 eV photon energy range) has been performed. Previous results on higher-oxidation states cross-section resonances around h nu = 130 eV are re-examined. The various oxide states do not present photoelectron diffraction peaks, when polar scans are performed in the (110) azimuthal plane. On the other hand, there is evidence that substrate silicon atoms close to the interface retain orientational order. Limits in the vertical distribution of the suboxides are given. The compatibility of our experimental findings with models of the current literature - in particular the so-called 'dimerized interface' model - is examined. (C) 1997 Elsevier Science B.V.
机译:同步辐射X射线光电子能谱(SRXPS)具有优化的表面和界面灵敏度,是一种独特的工具,可确定Si / SiO2界面处的次氧化物层的化学成分和空间扩展。 “热界面”处的键合似乎主要取决于Si晶体的取向。对于Si(001)/ SiO2,已进行了详细的光子能量依赖性和角度依赖性SRXPS研究(在120除以175 eV的光子能量范围内)。重新检查先前关于高氧化态的结果,即h nu = 130 eV附近的截面共振。当在(110)方位平面中执行极性扫描时,各种氧化物状态不会出现光电子衍射峰。另一方面,有证据表明靠近界面的衬底硅原子保持取向顺序。给出了低价氧化物垂直分布的极限。我们的实验结果与当前文献的模型(尤其是所谓的“二聚界面”模型)之间的兼容性得到了检验。 (C)1997年Elsevier Science B.V.

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