【24h】

Mechanism and control of crack generation in glass substrates during crystallization of a-Si Films by flash lamp annealing

机译:闪光灯退火a-Si膜结晶过程中玻璃基板中裂纹产生的机理和控制

获取原文
获取原文并翻译 | 示例
           

摘要

We investigate the impact of the materials of glass substrates on crack formation during flash lamp annealing (FLA) of 4.5 μm-thick precursor amorphous silicon (a-Si) films for the formation of polycrystalline Si (poly-Si) films. The use of soda lime glass substrates, with the largest thermal expansion coefficient (α) and the lowest glass transition temperature (T _g) in glass materials attempted in this study, results in the serious formation of cracks on and inside the glass substrates. Cracks are also seen on the surface of quartz glass substrates, which have much smaller α and higher T _g, after FLA. Furthermore, flash-lamp-crystallized (FLC) poly-Si films have linearly-connected low-crystallinity regions only when quartz glass substrates are used. These facts indicate that the expansion of Si films induces cracks in quartz glass substrates, while the expansion of the upper part of glass is the cause of the crack formation in glass substrates with large α. The generation of cracks is most significantly suppressed when we use alkali-free glass substrates, with a moderate α and a relatively high T _g, which will contribute to the realization of high-quality poly-Si films and high-performance solar cells.
机译:我们调查了玻璃基板材料对4.5μm厚的前体非晶硅(a-Si)膜的闪光灯退火(FLA)过程中裂纹形成的影响,以形成多晶硅(poly-Si)膜。本研究尝试在玻璃材料中使用具有最大热膨胀系数(α)和最低玻璃化转变温度(T _g)的钠钙玻璃基板,导致在玻璃基板上和内部严重形成裂纹。在FLA之后,在石英玻璃基板的表面上也可见到裂纹,这些裂纹的α小得多,T _g高。此外,仅在使用石英玻璃基板的情况下,闪光灯结晶(FLC)的多晶硅膜具有线性连接的低结晶度区域。这些事实表明,Si膜的膨胀在石英玻璃基板中引起裂纹,而玻璃上部的膨胀是在具有大α的玻璃基板中形成裂纹的原因。当我们使用具有中等α和相对较高T _g的无碱玻璃基板时,裂纹的产生得到了最大程度的抑制,这将有助于实现高质量的多晶硅膜和高性能的太阳能电池。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号