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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Electrical and corrosion properties of the Ti_5Si_3 thin films coated on glass substrate by APCVD method
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Electrical and corrosion properties of the Ti_5Si_3 thin films coated on glass substrate by APCVD method

机译：APCVD法在玻璃基板上涂覆Ti_5Si_3薄膜的电和腐蚀性能

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摘要

Ti_5Si_3 thin films were coated on glass substrate by atmospheric pressure chemical vapor deposition method at different temperatures. Electrical and corrosion properties of the thin films were investigated. The results show that the electrical resistivity of the thin films decreases initially with the increase in deposition temperature. However, it increases with the further increase of the temperature. The lowest electrical resistivity of 107 μΩ·cm is obtained at 710 °C. The least corrosion rates of the thin films at 95 °C of 0.10 nm/min and 0.13 nm/min in 1 N and 10 N acid solution and of 0.33 nm/min and 6.55 nm/min in 1 N and 10 N alkali solution, respectively, are obtained by weight-loss measurement method. The corrosion mechanisms of the thin films were also discussed in detail.
机译：通过大气压化学气相沉积法在不同温度下在玻璃基板上涂覆Ti_5Si_3薄膜。研究了薄膜的电和腐蚀性能。结果表明，薄膜的电阻率最初随着沉积温度的升高而降低。但是，随着温度的进一步升高而增加。在710°C时可获得107μΩ·cm的最低电阻率。薄膜在95°C下的最小腐蚀速率在1 N和10 N酸性溶液中为0.10 nm / min和0.13 nm / min，在1 N和10 N碱性溶液中为0.33 nm / min和6.55 nm / min，分别通过减肥测量方法获得。还详细讨论了薄膜的腐蚀机理。

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