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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate
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Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

机译：化学成分和非晶SiC的键合对沉积温度和衬底选择的依赖

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摘要

Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 °C. XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 °C to 650 °C. Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 °C. Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 °C on both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp~2 and sp~3 C-C/C-H bonds was identified.
机译：非晶SiC具有出色的机械，化学，电和光学特性，这些特性与工艺有关。在这项研究中，研究了沉积温度和衬底选择对沉积的非晶SiC的化学成分和键合的影响，均使用6英寸单晶硅和氧化物覆盖的硅晶片作为衬底。沉积在标准的低压化学气相沉积反应器中进行，甲基硅烷用作单一前体，并且沉积温度设定为600和650℃。 XPS分析用于研究化学成分，Si / C比和沉积非晶SiC的化学键。结果表明，这些性能随沉积温度而变化，并且当沉积温度从600°C升高到650°C时，基板对它们的影响很小。在600°C时，具有较高杂质浓度的接近化学计量的非晶SiC沉积在晶体Si衬底上。在两种基板上，在650°C下制备了杂质浓度低得多的少量富碳非晶SiC膜。四面体Si-C键被发现是所有沉积非晶SiC中的主要键。没有发现Si-H / Si-Si的贡献，而是sp〜2和sp〜3的C-C / C-H键。

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