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Study of the absorption edge of SnO_2 nanoparticles embedded in silica films

机译:二氧化硅薄膜中嵌入的SnO_2纳米粒子吸收边缘的研究

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摘要

Silica thin films with embedded SnO_2 nanoparticles have been grown on transparent substrates by the sol-gel method. Tin dioxide crystals with cassiterite structure are semiconductors with a wide band gap of ~ 3.6 eV. Optical absorption spectroscopy in the near ultraviolet-visible range has been exploited to probe nanostructuring features of such nanocrystals. The results show that the sintering conditions modify crystallite mean size and enable the occurrence of quantum confinement effects. The outcome is in accordance with transmission electron microscopy data conducted on analogous bulk samples.
机译:通过溶胶-凝胶法已经在透明基板上生长了具有嵌入式SnO_2纳米粒子的二氧化硅薄膜。具有锡石结构的二氧化锡晶体是宽带隙约为3.6 eV的半导体。已经开发了在紫外可见范围内的光吸收光谱法来探测这种纳米晶体的纳米结构特征。结果表明,烧结条件改变了微晶的平均尺寸,并实现了量子约束效应的发生。结果与在类似的大块样品上进行的透射电子显微镜数据一致。

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