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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell
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Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell

机译：p型氢化非晶硅氧化物薄膜的制备，表征及其在太阳能电池中的应用

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摘要

Thin film wide band gap p-type hydrogenated amorphous silicon (a-Si) oxide (p-a-SiOx:H) materials were prepared at 175 °C substrate temperature in a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and applied to the window layer of a-Si solar cell. We used nitrous oxide (N_2O), hydrogen (H2), silane (SiH_4), and diborane (B _2H_6) as source gases. Optical band gap of the 1% diborane doped films is in the range of 1.71 eV to 2.0 eV for films with increased oxygen content. Dark conductivity of these films is in the range of 8.7 × 10- 5 S/cm to 5.1 × 10- 7 S/cm. The fall in conductivity, that is nearly two orders of magnitude, for about 0.3 eV increase in the optical gap can be understood with the help of Arrhenius relation of conductivity and activation energy, and may not be significantly dependant on defects associated to oxygen incorporation. Defect density, estimated from spectroscopic ellipsometry data, is found to decrease for samples with higher oxygen content and wider optical gap. Few of these p-type samples were used to fabricate p-i-n type solar cells. Measured photo voltaic parameters of one of the cells are as follows, open circuit voltage (Voc) = 800 mV, short circuit current density (Jsc) = 16.3 mA/cm~2, fill-factor (FF) = 72%, and photovoltaic conversion efficiency (η) = 9.4%, which may be due to improved band gap matching between p-a-SiO_x:H and intrinsic layer. J _(sc), FF and Voc of the cell can further be improved at optimized cell structure and with intrinsic layer having a lower number of defects.
机译：薄膜宽带隙p型氢化非晶硅（a-Si）氧化物（pa-SiOx：H）材料是在射频等离子体增强化学气相沉积（RF-PECVD）中于175°C的基板温度下制备的。非晶硅太阳能电池的窗口层。我们使用一氧化二氮（N_2O），氢（H2），硅烷（SiH_4）和乙硼烷（B _2H_6）作为原料气。对于含氧量增加的薄膜，掺有1％乙硼烷的薄膜的光学带隙在1.71 eV至2.0 eV的范围内。这些薄膜的暗电导率在8.7×10-5 S / cm到5.1×10-7 S / cm的范围内。借助电导率和活化能的阿伦尼乌斯（Arrhenius）关系，可以理解光学间隙增加约0.3 eV时，电导率的下降，接近两个数量级，并且可能不会明显依赖于与氧掺入有关的缺陷。从椭圆偏振光谱数据估计的缺陷密度发现，对于含氧量较高和光学间隙较宽的样品，其缺陷密度会降低。这些p型样品中很少有用于制造p-i-n型太阳能电池。其中一个电池的测得的光伏参数如下：开路电压（Voc）= 800 mV，短路电流密度（Jsc）= 16.3 mA / cm〜2，填充系数（FF）= 72％，光伏转换效率（η）= 9.4％，这可能是由于改善了pa-SiO_x：H与本征层之间的带隙匹配。在优化的电池结构和具有较少缺陷的本征层的情况下，可以进一步改善电池的J_（sc），FF和Voc。

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