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Aluminum induced formation of SiGe alloy in Ge/Si/Al thin film structure

机译:铝诱导的Ge / Si / Al薄膜结构的SiGe合金形成

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摘要

In this work, a study of aluminum induced crystallization (AIC) of thin film germanium/silicon/aluminum (Ge/Si/Al) structure on oxidized silicon is presented. The Ge/Si/Al trilayer structure was prepared in three consecutive thin film deposition processes. The AIC was performed in nitrogen at 500 °C within time duration between 1 and 9 h. The progress of crystallization was monitored by optical microscopy, Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM) combined with energy dispersive X-ray spectroscopy (EDS). It was found that in Ge/Si/Al structure the AIC can lead to formation of SiGe alloy at temperature of 500 °C. This presents an alternative low-temperature formation method of SiGe which is suitable for integration with the conventional Si technology in electronic device fabrication.
机译:在这项工作中,研究了铝在氧化硅上的薄膜锗/硅/铝(Ge / Si / Al)结构的铝诱导结晶(AIC)。在三个连续的薄膜沉积工艺中制备了Ge / Si / Al三层结构。 AIC在氮气中于500°C下进行1到9 h。通过光学显微镜,拉曼光谱,X射线衍射(XRD)和扫描电子显微镜(SEM)结合能量色散X射线光谱(EDS)监控结晶过程。已经发现,在Ge / Si / Al结构中,AIC可以导致在500°C的温度下形成SiGe合金。这提出了一种可选的SiGe低温形成方法,该方法适合与电子器件制造中的常规Si技术集成。

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