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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Optical properties and chemical bonding characteristics of amorphous SiN _X:H thin films grown by the plasma enhanced chemical vapor deposition method
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Optical properties and chemical bonding characteristics of amorphous SiN _X:H thin films grown by the plasma enhanced chemical vapor deposition method

机译：等离子体增强化学气相沉积法生长非晶SiN _X：H薄膜的光学性质和化学键合特性

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Amorphous silicon nitride (SiN _X:H) thin films grown by the plasma enhanced chemical vapor deposition (PECVD) method are presently the most important antireflection coatings for crystalline silicon solar cells. In this work, we investigated the optical properties and chemical bonding characteristics of the amorphous SiN _X:H thin films deposited by PECVD. Silane (SiH _4) and ammonia (NH _3) were used as the reactive precursors. The dependence of the growth rate and refractive index of the SiN _X:H thin films on the SiH _4/NH _3 gas flow ratio was studied. The chemical bonding characteristics and the surface morphologies of the SiN _X:H thin films were studied using the Fourier transform infrared spectroscopy and atomic force microscopy, respectively. We also investigated the effect of rapid thermal processing on the optical properties and surface morphologies of the SiN _X:H thin films. It was found that the rapid thermal processing resulted in a decrease in the thickness, increase in the refractive index, and coarser surfaces for the SiN _X:H thin films.
机译：通过等离子体增强化学气相沉积（PECVD）方法生长的非晶氮化硅（SiN_X：H）薄膜目前是用于晶体硅太阳能电池的最重要的抗反射涂层。在这项工作中，我们研究了通过PECVD沉积的非晶SiN _X：H薄膜的光学性质和化学键合特性。硅烷（SiH _4）和氨气（NH _3）用作反应性前体。研究了SiN _X：H薄膜的生长速率和折射率对SiH _4 / NH _3气体流量比的依赖性。使用傅立叶变换红外光谱和原子力显微镜分别研究了SiN _X：H薄膜的化学键合特性和表面形貌。我们还研究了快速热处理对SiN _X：H薄膜的光学性质和表面形态的影响。已经发现，快速热处理导致SiN _X：H薄膜的厚度减小，折射率增加并且表面更粗糙。

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