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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >EFFECTS OF ELECTRON BEAM IRRADIATION ON HIGHLY ORIENTED POLY(DI-METHYL SILANE) FILM
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EFFECTS OF ELECTRON BEAM IRRADIATION ON HIGHLY ORIENTED POLY(DI-METHYL SILANE) FILM

机译：电子束辐照对高取向聚二甲基硅烷薄膜的影响

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摘要

The effects of electron beam irradiation on highly oriented poly(di-methyl silane) film are studied. The highly oriented films, in which the silicon backbone of poly(di-methyl silane) is perpendicular to the substrate surface, are prepared by means of a vacuum-evaporation technique. The orientation of the polysilane is confirmed by ultraviolet absorption and x-ray diffraction measurements. By electron beam irradiation, the polysilanes in the film are bonded with the nearest neighbour chains by forming C-O-C, Si-O-C, and/or Si-O-Si groups, which are investigated using Fourier transform infrared spectroscopy. The irradiated part of the film is hardened, and remains on the substrate after etching by concentrated H2SO4, whereas the other part is completely removed. By using such a process, a negative-tone pattern having sufficient resistance against acid can be obtained. The possibility of the application of this effect is also discussed on the basis of the microscopic structure of the present film. [References: 9]
机译：研究了电子束辐照对高取向聚二甲基硅烷薄膜的影响。借助于真空蒸发技术制备其中聚（二甲基硅烷）的硅骨架垂直于基底表面的高取向膜。聚硅烷的取向通过紫外线吸收和X射线衍射测量来确认。通过电子束照射，膜中的聚硅烷通过形成C-O-C，Si-O-C和/或Si-O-Si基团与最接近的相邻链键合，使用傅立叶变换红外光谱法对其进行了研究。膜的辐照部分被硬化，并在被浓H2SO4蚀刻后保留在基板上，而另一部分则被完全去除。通过使用这样的方法，可以获得具有足够的耐酸性的负极图案。还在本膜的微观结构的基础上讨论了施加这种效果的可能性。 [参考：9]

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