...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Thermoreflectance temperature imaging of integrated circuits: calibration technique and quantitative comparison with integrated sensors and simulations
【24h】

Thermoreflectance temperature imaging of integrated circuits: calibration technique and quantitative comparison with integrated sensors and simulations

机译：集成电路的热反射温度成像：校准技术以及与集成传感器和仿真的定量比较

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Camera-based thermoreflectance microscopy is a unique tool for high spatial resolution thermal imaging of working integrated circuits. However, a calibration is necessary to obtain quantitative temperatures on the complex surface of integrated circuits. The spatial and temperature resolutions reached by thermoreflectance are excellent (360 nm and 2.5 x 10(-2) K in 1 min here), but the precision is more difficult to assess, notably due to the lack of comparable thermal techniques at submicron scales. We propose here a Peltier element control of the whole package temperature in order to obtain calibration coefficients simultaneously on several materials visible on the surface of the circuit. Under high magnifications, movements associated with thermal expansion are corrected using a piezo electric displacement and a software image shift. This calibration method has been validated by comparison with temperatures measured using integrated thermistors and diodes and by a finite volume simulation. We show that thermoreflectance measurements agree within a precision of +/- 2.3% with the on-chip sensors measurements. The diode temperature is found to underestimate the actual temperature of the active area by almost 70% due to the thermal contact of the diode with the substrate, acting as a heat
机译：基于相机的热反射显微镜是用于工作集成电路的高空间分辨率热成像的独特工具。但是，必须进行校准才能在集成电路的复杂表面上获得定量温度。通过热反射达到的空间和温度分辨率非常好（此处在1分钟内达到360 nm和2.5 x 10（-2）K），但是精度更难评估，特别是由于缺乏亚微米级别的可比热技术。我们在此提出整个封装温度的珀耳帖元件控制，以便同时在电路表面上可见的几种材料上获得校准系数。在高放大倍率下，使用压电位移和软件图像偏移来校正与热膨胀相关的运动。通过与使用集成热敏电阻和二极管测得的温度进行比较以及通过有限体积模拟，已经验证了该校准方法。我们表明，热反射率测量值与片上传感器测量值在+/- 2.3％的精度范围内一致。由于二极管与基板的热接触（作为热量），发现二极管温度比有效区域的实际温度低了将近70％

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号