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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >An abrupt switch between the two photoluminescence bands within alkylated silicon nanocrystals
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An abrupt switch between the two photoluminescence bands within alkylated silicon nanocrystals

机译：烷基化硅纳米晶体中两个光致发光带之间的突然切换

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摘要

Photoluminescence (PL) spectra from a series of alkylated silicon nanocrystals (SiNCs) derived from porous silicon wafers formed through etching at different current densities have been investigated. SiNCs from wafers etched at high current density (382mAcm2) emit orange at 609nm while smaller SiNCs formed from wafers etched at current density of 13mAcm2 emit blue (395nm), yet counter to current understanding of quantum confinement and its role within bandgap engineering, luminescence from SiNCs from wafers etched at intermediate current densities show no transition between the two bands, rather an abrupt switch between them is observed. SEM images show that as the silicon surface undergoes electrochemical etching under high current density many of the smaller nanostructures are destroyed leaving only the larger, more resilient nanostructures available to undergo hydrosilation. X-ray photoelectron spectroscopy measurements identify that both blue and orange SiNCs comprise a large degree of SiC and SiO thus the nature of the orange emission is likely related to defect states in silica or suboxide formed near the Si/SiO _2 interface which populate the bandgap and modify the emission character. This is the first paper in the literature to unveil the relationship between etching current density and PL emission bands of alkylated SiNCs.
机译：已经研究了一系列烷基化硅纳米晶体（SiNC）的光致发光（PL）光谱，这些烷基化硅纳米晶体是通过在不同电流密度下通过蚀刻形成的多孔硅晶片得到的。来自以高电流密度（382mAcm2）蚀刻的晶片的SiNC在609nm处发出橙色，而由以13mAcm2电流密度蚀刻的晶片形成的较小的SiNC发出蓝色（395nm），但这与当前对量子限制及其在带隙工程中的作用的理解背道而驰，来自以中等电流密度蚀刻的晶圆的SiNC在这两个频段之间未显示过渡，而是观察到它们之间的突然切换。 SEM图像显示，当硅表面在高电流密度下进行电化学蚀刻时，许多较小的纳米结构被破坏，仅留下较大的，更有弹性的纳米结构可用于硅氢化。 X射线光电子能谱测量表明，蓝色和橙色SiNC都包含大量的SiC和SiO，因此橙色发射的性质可能与填充带隙的Si / SiO _2界面附近形成的二氧化硅或次氧化物中的缺陷状态有关。并修改发射特性。这是文献中第一篇揭示蚀刻电流密度与烷基化SiNC的PL发射带之间关系的论文。

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