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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Memristive characteristics in semiconductor/metal contacts tested by conductive atomic force microscopy
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Memristive characteristics in semiconductor/metal contacts tested by conductive atomic force microscopy

机译：通过导电原子力显微镜测试的半导体/金属触点的忆阻特性

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摘要

Memristive characteristics in semiconductor/metal contacts are studied by conductive atomic force microscopy. The ZnO/Au device shows excellent memristive characteristics under Pt and TiN tips and the resistances of the high-resistance state and the low-resistance state are almost unchanged with time. Unipolar resistive switching behaviour is observed when a positive voltage is applied. In addition, the pure Au film also shows resistive switching behaviour under the TiN tip which was used to test the ZnO/Au device, but this behaviour cannot be observed under a Pt tip. Our results suggest that the memristive characteristics existing in semiconductor/metal contacts are due to the formation of conducting filaments in the interior of the semiconductor and the change in the energy barrier at the interface between the conductive atomic force microscope tip and the ZnO film.
机译：通过导电原子力显微镜研究了半导体/金属触点中的忆阻特性。 ZnO / Au器件在Pt和TiN尖端下显示出优异的忆阻特性，并且高阻态和低阻态的电阻随时间几乎不变。当施加正电压时，观察到单极电阻切换行为。此外，纯金膜还显示了用于测试ZnO / Au器件的TiN尖端下的电阻切换行为，但在Pt尖端下无法观察到这种行为。我们的结果表明，存在于半导体/金属触点中的忆阻特性是由于在半导体内部形成了导电细丝，以及导电原子力显微镜尖端与ZnO膜之间的界面处的能垒发生了变化。

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