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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Thermographic analysis of localized conductive channels in bipolar resistive switching devices
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Thermographic analysis of localized conductive channels in bipolar resistive switching devices

机译：双极电阻式开关设备中局部导电通道的热成像分析

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摘要

Temperature distributions in Pt/SrZrO_3/SrRuO_3 and Pt/TiO_2/Pt thin film heterostructures were imaged by infrared thermography while under electrical bias. Local hot spots with lateral sizes between 5 and 30 μm appear during electroforming, they reappear during switching, and they show temperature increases from 50 to above 250 °C. Over 90% of conductivity increases produced by electroforming were confined to the hotspot locations. In some structures, thermography demonstrated that two separate conductive paths could be formed using opposite biases, and their conductivities could be repeatedly switched on and off with opposite voltage dependences. Direct evidence of large temperature increases supports the existence of Joule heating within the conductive channel during resistance switching of oxide heterostructures.
机译：在电偏压下，通过红外热成像法对Pt / SrZrO_3 / SrRuO_3和Pt / TiO_2 / Pt薄膜异质结构中的温度分布进行了成像。在电铸过程中会出现横向尺寸在5至30μm之间的局部热点，在切换过程中会再次出现，并且温度会从50°C升高到250°C以上。电铸产生的超过90％的电导率增加被限制在热点位置。在某些结构中，热成像表明，可以使用相反的偏压形成两条单独的导电路径，并且可以以相反的电压依赖性重复地打开和关闭它们的电导率。大量温度升高的直接证据支持在氧化物异质结构的电阻转换过程中导电通道内存在焦耳热。

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