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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs
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Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs

机译：掺杂和未掺杂栅极的AlGaN / GaN HEMT的三角量子阱模型中的电荷密度和等离子体激元模式

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摘要

We have calculated the plasmon frequency of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMT). The impact of HEMT's parameters on the plasmon frequency and the sheet charge density of the 2DEG is discussed in detail. The charge density in the HEMT's channel is calculated by means of a triangular quantum well model. It has been found that the AlGaN/GaN heterostructure induces plasmon oscillations in the THz range with larger frequencies compared with other semiconductor compounds. The sensitivity of the tunability of these frequencies is considerable, especially using a variable applied gate voltage. We have derived optimal structure parameters for obtaining a maximum plasmon frequency for a given doping concentration. We will show that the accuracy of this optimized frequency value is dependent on the average position Δd of charge density in the triangular shaped (quantum well) channel. The interaction between radiation and plasmons has many applications such as detectors, mixers and generators of THz waves.
机译：我们已经计算了AlGaN / GaN高电子迁移率晶体管（HEMT）中二维电子气（2DEG）的等离子体频率。详细讨论了HEMT参数对2DEG的等离激元频率和薄层电荷密度的影响。 HEMT通道中的电荷密度是通过三角量子阱模型计算的。已经发现，与其他半导体化合物相比，AlGaN / GaN异质结构以更高的频率在THz范围内引起等离子体激元振荡。这些频率的可调性的灵敏度非常可观，尤其是在使用可变施加的栅极电压时。我们已经得出了最佳结构参数，以获得给定掺杂浓度下的最大等离激元频率。我们将显示，此优化频率值的精度取决于三角形（量子阱）通道中电荷密度的平均位置Δd。辐射与等离子体激元之间的相互作用具有许多应用，例如太赫兹波的检测器，混合器和发生器。

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