Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

Corr C.; Boswell R.; Carman R.

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Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

机译：GaN的远程等离子体化学气相沉积过程中的气相发射光谱及其与生长动力学的关系

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A remote plasma chemical vapour deposition (RPCVD) system for the growth of gallium nitride (GaN) thin films is investigated using optical emission spectroscopy (OES). The intensities of the various excited species in pure nitrogen as well as nitrogen/hydrogen plasmas are correlated with GaN film growth characteristics. We show a correlation between the plasma source spectrum, the downstream spectrum where trimethylgallium is introduced and the GaN film quality. In particular, we investigate the addition of hydrogen, which greatly affects the gas phase species and the GaN film characteristics. OES is demonstrated to be a valuable monitoring tool in a RPCVD system for optimization of GaN growth.

机译：使用光发射光谱法（OES）研究了用于生长氮化镓（GaN）薄膜的远程等离子体化学气相沉积（RPCVD）系统。纯氮以及氮/氢等离子体中各种激发物质的强度与GaN薄膜的生长特性相关。我们显示了等离子体源光谱，引入三甲基镓的下游光谱与GaN膜质量之间的相关性。特别是，我们研究了氢的添加，这极大地影响了气相种类和GaN膜的特性。 OES被证明是RPCVD系统中用于优化GaN生长的有价值的监测工具。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2011年第4期|共8页
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Corr C.; Boswell R.; Carman R.;
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1. Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics [J] . Corr C., Boswell R., Carman R. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2011,第4期

机译：GaN的远程等离子体化学气相沉积过程中的气相发射光谱及其与生长动力学的关系
2. Optical emission spectroscopy of electron cyclotron resonance plasma enchanced metalorganic chemical vapor deposition process for deposition of GaN film [J] . Fu SL, Chen JF, Li Y, Plasma Science & Technology . 2008,第1期

机译：电子回旋共振等离子体增强的金属有机化学气相沉积工艺在GaN膜沉积中的发射光谱
3. Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film [J] . 符斯列, 陈俊芳, 李赟, 等离子体科学和技术：英文版 . 2008,第001期

机译：电子回旋共振-等离子体增强的金属有机化学气相沉积工艺沉积GaN薄膜的发射光谱
4. Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition [C] . Afifuddin, A., Butcher, . 2000

机译：微波等离子体辅助激光诱导化学气相沉积法生长的GaN的生长与表征
5. Numerical simulation and emission diagnostics of the gas-phase growth environment during carbon nanotube synthesis by plasma-enhanced chemical vapor deposition. [D] . Garg, Rajesh Kumar. 2006

机译：等离子体增强化学气相沉积法在碳纳米管合成过程中气相生长环境的数值模拟和排放诊断。
6. Probing the Gas-Phase Dynamics of Graphene Chemical Vapour Deposition using in-situ UV Absorption Spectroscopy [O] . Abhay Shivayogimath, David Mackenzie, Birong Luo, -1

机译：用原位紫外吸收光谱探测石墨烯化学气相沉积的气相动力学
7. Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon: Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates [O] . C. Tixier, P. Tristant, J. Desmaison, 2015

机译：远程微波等离子体增强化学气相沉积非晶碳：光发射光谱表征余辉和生长速率
8. Continuous SiN(sub x) Plasma Processing Using the Inline MW RPECVD (MicroWaveRemote Plasma Enhanced Chemical Vapour Deposition) System [R] . Weeber, A. W., Soppe, W. J. 2001

机译：使用Inline mW RpECVD（microWave远程等离子体增强化学气相沉积）系统进行连续siN（sub x）等离子体处理

Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

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