Effect of oxygen species on the positive flat-band voltage shift in Al _2O_3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

Kang H.-S.; Siva Pratap Reddy M.; Kim D.-S.; Kim K.-W.; Ha J.-B.; Lee Y.S.; Choi H.-C.; Lee J.-H.

首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effect of oxygen species on the positive flat-band voltage shift in Al _2O_3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

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Effect of oxygen species on the positive flat-band voltage shift in Al _2O_3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

机译：氧对沉积后退火的Al _2O_3 / GaN金属-绝缘体-半导体电容器的正平带正电压偏移的影响

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The electrical characteristics of the Al_2O_3/GaN metal-insulator-semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O_2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaO _x N_y) interfacial layer is formed at Al_2O _3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al_2O_3. After PDA in O_2 ambient, the GaO_x N_y interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al_2O_3/GaN interface and hence positively shifting the flat band voltage (V_(FB)) for the capacitors.

机译：研究了Al_2O_3 / GaN金属-绝缘体-半导体电容器的电学特性，重点研究了在O_2环境中的后沉积退火（PDA）的影响。 X射线光电子能谱分析表明，由于引入了Al_2O_3中释放出的氧气，即使在未退火的样品中，Al_2O_3 / GaN界面也形成了氮氧化镓（GaO_x N_y）界面层。在O_2环境中进行PDA之后，GaO_x N_y界面层变得富氧，这在增加Al_2O_3 / GaN界面处的负有效氧化物电荷并因此使电容器的平带电压（V_（FB））正移方面起了作用。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2013年第15期|共6页
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Kang H.-S.; Siva Pratap Reddy M.; Kim D.-S.; Kim K.-W.; Ha J.-B.; Lee Y.S.; Choi H.-C.; Lee J.-H.;
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1. Effect of oxygen species on the positive flat-band voltage shift in Al _2O_3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing [J] . Kang H.-S., Siva Pratap Reddy M., Kim D.-S., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第15期

机译：氧对沉积后退火的Al _2O_3 / GaN金属-绝缘体-半导体电容器的正平带正电压偏移的影响
2. Study of the flat band voltage shift of metal/insulator-GaN capacitors by annealing [J] . Junjiroh Kikawa, Masamitsu Kaneko, Hirotaka Otake, Physica status solidi, B. Basic research . 2010,第7期

机译：通过退火研究金属/绝缘体/ n-GaN电容器的平带电压偏移
3. Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere [J] . Lee Jae-Gil, Kim Hyun-Seop, Lee Jung-Yeon, Semiconductor science and technology . 2015,第11期

机译：在氧气氛中进行后金属化退火的凹栅GaN MOSHFET的平带电压漂移研究
4. Flat-band Voltage Shift of MOS Capacitors with Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing [C] . M. Kadoshima, K. Yamamoto, H. Fujiwara, Materials Research Society Symposium . 2004

机译：由金属化退火后钽氮化物栅电极的MOS电容器的平带电压偏移
5. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon-nitride films [D] . Shams, Qamar Ahmad 1988

机译：沉积后注入和退火对PECVD沉积氮化硅膜性能的影响
6. Effects of Post-Deposition Annealing on ZrO2-GaN MOS Capacitors with H2O and O3 as the Oxidizers [O] . Meijuan Zheng, Guozhen Zhang, Xiao Wang, 2017

机译：沉积后退火对以H2O和O3为氧化剂的ZrO2 / n-GaN MOS电容器的影响
7. Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers [O] . Meijuan Zheng, Guozhen Zhang, Xiao Wang, 2017

机译：H2O和O3作为氧化剂的ZrO2 / N-GaN MOS电容器在ZrO2 / N-GaN MOS电容器上的影响

Effect of oxygen species on the positive flat-band voltage shift in Al _2O_3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing

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