...
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The recycling trap: A generalized explanation of discharge runaway in high-power impulse magnetron sputtering
【24h】

The recycling trap: A generalized explanation of discharge runaway in high-power impulse magnetron sputtering

机译:回收阱:大功率脉冲磁控溅射中放电失控的一般解释

获取原文
获取原文并翻译 | 示例
           

摘要

Contrary to paradigm, magnetron discharge runaway cannot always be related to self-sputtering. We report here that the high density discharge can be observed with all conducting targets, including low sputter yield materials such as carbon. Runaway to a high density discharge is therefore generally based on self-sputtering in conjunction with the recycling of gas atoms in the magnetic field-affected pre-sheath. A generalized runaway condition can be formulated, offering a pathway to a time-dependent model for high-power impulse magnetron sputtering that includes rarefaction and an explanation for the termination of runaway.
机译:与范式相反,磁控管放电失控并不总是与自溅射有关。我们在这里报告,可以在所有导电目标上观察到高密度放电,包括碳等低溅射产率的材料。因此,高密度放电的失控通常基于自溅射以及磁场影响的预护套中气体原子的再循环。可以制定一般的失控条件,为高功率脉冲磁控溅射的时变模型提供路径,该模型包括稀疏度和失控终止的解释。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号