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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Mn-doped TiO _2 thin films with significantly improved optical and electrical properties
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Mn-doped TiO _2 thin films with significantly improved optical and electrical properties

机译：Mn掺杂的TiO _2薄膜具有显着改善的光电性能

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摘要

TiO _2 thin films with various Mn doping contents were fabricated by reactive magnetron sputtering deposition at 550°C and their structural, optical and electrical properties were characterized. All films were made of densely packed columnar grains with a fibrous texture along the normal direction of the substrate. The as-deposited structure in the pure TiO 2 film consisted of anatase grains with the [101] texture. Mn incorporation stabilized the rutile phase and induced lattice contraction in the [100] direction. The texture in the Mn-doped films changed from [110] to [200] with increasing Mn content. The incorporation of Mn in the TiO 2 lattice introduced intermediate bands into its narrowed forbidden gap, leading to remarkable red-shifts in the optical absorption edges, together with significantly improved electrical conductivity of the thin films. Hall measurement showed that the incorporation of Mn-induced p-type conductivity, with hole mobility in heavily doped TiO 2 (40% Mn) being about an order higher than electron mobility in single-crystal rutile TiO 2. Oxygen vacancies, on the other hand, interacted with substitutional Mn atoms to reduce its effect on optical and electrical properties.
机译：通过在550℃反应磁控溅射沉积制备了具有不同Mn掺杂含量的TiO _2薄膜，并对其结构，光学和电学性质进行了表征。所有薄膜均由沿基片法线方向具有纤维质地的密集堆积的柱状颗粒制成。纯TiO 2薄膜中的沉积结构由具有[101]织构的锐钛矿晶粒组成。 Mn的掺入稳定了金红石相并引起[100]方向的晶格收缩。 Mn掺杂膜中的织构随Mn含量的增加从[110]变为[200]。 Mn在TiO 2晶格中的引入将中间带引入其变窄的禁止间隙中，从而导致光吸收边缘出现明显的红移，同时大大改善了薄膜的导电性。霍尔测量表明，掺入了Mn诱导的p型电导率，重掺杂TiO 2（40％Mn）中的空穴迁移率比单晶金红石TiO 2中的电子迁移率高约一个数量级。与取代的Mn原子相互作用以减少其对光学和电学性质的影响。

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