...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Time-resolved measurement of film growth during high-power pulsed magnetron sputtering (HIPIMS) of titanium
【24h】

Time-resolved measurement of film growth during high-power pulsed magnetron sputtering (HIPIMS) of titanium

机译：钛大功率脉冲磁控溅射（HIPIMS）过程中膜生长的时间分辨测量

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The growth rate during high-power pulsed magnetron sputtering (HIPIMS) of titanium is measured with a temporal resolution of up to 25 μs using a rotating shutter concept. According to that concept a 200 μm slit is rotated in front of the substrate synchronous with the HIPIMS pulses. Thereby, the growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry, the temporal variation of the growth flux per pulse is deduced. The time-resolved growth rates are measured for 0.25, 0.5 and 1 Pa with pulse lengths of 50, 200 and 400 μs for an average power of 100 W. We can clearly identify, the individual phases of a HIPIMS pulse consisting of ignition, current rise, gas rarefaction, plateau/self-sputtering, and afterglow as described in the literature. In addition, the maximum film growth is only reached after gas rarefaction, indicating a dynamic change in local transport properties. After the end of the HIPIMS pulse, the growth rate decays following two time constants of 100 μs and of ～ms, respectively. The first is consistent with the decay of the ion flux in the afterglow; the second with a decay of reactive neutrals. The absolute comparison of growth rates indicates that a reduction of the efficiency to 30% for very short pulses is typical for a true HIPIMS plasma.
机译：钛的大功率脉冲磁控溅射（HIPIMS）过程中的生长速率使用旋转快门概念以高达25μs的时间分辨率进行测量。根据该概念，与HIPIMS脉冲同步地在基板前旋转200μm缝隙。由此，生长通量横向地分布在基板上。通过用轮廓测量法测量所得的沉积轮廓，可以得出每个脉冲的生长通量的时间变化。测量的时间分辨增长率为0.25、0.5和1 Pa，脉冲长度分别为50、200和400μs，平均功率为100W。我们可以清楚地识别出HIPIMS脉冲的各个相位，包括点火，电流如文献所述，温度升高，气体稀少，平稳/自溅射和余辉。此外，只有在气体稀化之后才能达到最大的薄膜生长，这表明局部传输特性发生了动态变化。在HIPIMS脉冲结束后，增长率分别遵循两个时间常数100μs和〜ms衰减。第一个与余辉中离子通量的衰减一致;第二个是带有反应性中性线的衰减。增长率的绝对比较表明，对于真正的HIPIMS等离子体，很短的脉冲效率通常降低到30％。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号