Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

S Bietti; C Somaschini; C Frigeri; A Fedorov; L Esposito; L Geelhaar; S Sanguinetti

首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

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Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

机译：在无氧化层的硅上具有可选的数密度的自辅助GaAs纳米线

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We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique.

机译：我们提出了在没有被氧化硅覆盖的裸Si（1 1 1）上具有可选数量密度的自辅助GaAs纳米线（NWs）的增长。我们通过最初自组装GaAs岛来确定NW的数量密度，这些GaAs岛的顶部是单个NW形核的。初始GaAs基岛的数量密度可通过液滴外延进行调整，然后将相同程度的控制转移到NW。该过程是在超高真空环境中的一次生长过程中完全完成的，不需要覆盖衬底的氧化物层，也不需要任何预构图技术。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2014年第39期|共5页
作者
S Bietti; C Somaschini; C Frigeri; A Fedorov; L Esposito; L Geelhaar; S Sanguinetti;
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正文语种 eng
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nanowires; III-V semiconductors; molecular beam epitaxy;

机译：纳米线;III-V族半导体;分子束外延;

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1. Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer [J] . S Bietti, C Somaschini, C Frigeri, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第39期

机译：在无氧化层的硅上具有可选的数密度的自辅助GaAs纳米线
2. Effect of Growth Parameters and Substrate Surface Preparation for High-Density Vertical GaAs/GaAsSb Core-Shell Nanowires on Silicon with Photoluminescence Emission at 1.3 mu m [J] . Kasanaboina Pavan Kumar, Ojha Sai Krishna, Sami Shifat Us, Journal of Electronic Materials . 2016,第4期

机译：高密度垂直GaAs / GaAsSb核壳纳米线的生长参数和衬底表面制备对光致发光为1.3μm的硅的影响
3. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities [J] . Stegemann Bert, Gad Karim M., Balamou Patrice, Applied Surface Science . 2017,第Feba15期

机译：晶体硅晶片上的超薄氧化硅层：具有低缺陷密度的化学突变SiO2 / Si界面方面先进氧化技术的比较
4. KINETIC MODELLING OF THE SELECTIVE EPITAXY OF GaAs ON PATTERNED SUBSTRATES BY HVPE. APPLICATION TO THE CONFORMAL GROWTH OF LOW DEFECT DENSITY GaAs LAYERS ON SILICON [C] . Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics . 1999

机译：HVPE通过图案化底物的选择性外延的动力学建模。应用于硅上低缺陷密度GaAs层的保形生长
5. Ballistic electron emission microscopy and internal photoemission study on metal bi-layer/oxide/silicon, high-k oxide/silicon, and "end-on" metal contacts to vertical silicon nanowires. [D] . Cai, Wei. 2010

机译：金属双层/氧化物/硅，高k氧化物/硅以及垂直硅纳米线的“端对端”金属触点的弹道电子发射显微镜和内部光发射研究。
6. Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111) [O] . Morten Hannibal Madsen, Martin Aagesen, Peter Krogstrup, 2011

机译：氧化物层对Si（111）上InAs纳米线生长的影响
7. Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires [O] . Samatcha Vorathamrong, Somsak Panyakeow, Somchai Ratanathammaphan, 2019

机译：天然氧化硅层的表面演化及其对自助VLS GaAs纳米线生长的影响

Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

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