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METHOD OF SELECTIVELY PATTERNING SILICON GERMANIUM LAYER WITH ION IMPLANTATION FOR SELECTIVELY PATTERNING ONLY SILICON GERMANIUM LAYER WITHOUT PATTERNING TOP LAYER AND BOTTOM LAYER IN STACKED STRUCTURE OF SILICON LAYER/SILICON GERMANIUM LAYER/SILICON LAYER
METHOD OF SELECTIVELY PATTERNING SILICON GERMANIUM LAYER WITH ION IMPLANTATION FOR SELECTIVELY PATTERNING ONLY SILICON GERMANIUM LAYER WITHOUT PATTERNING TOP LAYER AND BOTTOM LAYER IN STACKED STRUCTURE OF SILICON LAYER/SILICON GERMANIUM LAYER/SILICON LAYER
PURPOSE: A method of selectively patterning a silicon germanium layer with ion implantation is provided to selectively pattern only the silicon germanium layer without patterning a top layer and a bottom layer in a stacked structure of silicon layer/silicon germanium layer/silicon layer. CONSTITUTION: A silicon germanium layer is introduced. Ions are selectively implanted into the silicon germanium layer. An etch-resistant characteristic is added to an ion-implanted part(250) except for an ion-free part of the silicon germanium layer. An etch process is performed to remove the ion-free part of the silicon germanium layer except for the ion-implanted part of the silicon germanium layer.
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