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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Nonstationary holographic currents in neutron-irradiated SiC crystal
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Nonstationary holographic currents in neutron-irradiated SiC crystal

机译：中子辐照SiC晶体中的非平稳全息电流

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摘要

We report the excitation of nonstationary holographic currents in semi-insulating 6H-SiC crystal preliminarily irradiated by reactor neutrons. The currents are studied for the cases of zero and non-zero external electric fields. The dependences of the signal amplitude versus the frequency of phase modulation, light intensity, spatial frequency and amplitude of the external ac field are measured. The frequency transfer functions of the effect demonstrate unusual behaviour, namely, there are two frequency-independent regions in the diffusion regime of signal excitation and low-frequency maximum in the experiments with the applied ac field. These peculiarities are explained in the frames of a two-level model of semiconductor. Photoconductivity, diffusion length of electrons, thermal excitation rate and ionization cross section for shallow traps are estimated for the wavelength λ = 532 nm.
机译：我们报告了由反应堆中子初步辐照的半绝缘6H-SiC晶体中的非平稳全息电流的激发。研究了零和非零外部电场情况下的电流。测量信号幅度与相位调制频率，光强度，空间频率和外部交流场的幅度之间的相关性。该效应的频率传递函数表现出不同寻常的行为，即在施加交流场的实验中，信号激励的扩散机制中存在两个频率独立的区域，而低频最大值存在。这些特殊性在半导体的两级模型的框架中进行了解释。对于波长为λ= 532 nm的光，估计了浅陷阱的光电导性，电子的扩散长度，热激发速率和电离截面。

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