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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Dynamics of negative bias thermal stress-induced threshold voltage shifts in indium zinc oxide transistors: impact of the crystalline structure on the activation energy barrier
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Dynamics of negative bias thermal stress-induced threshold voltage shifts in indium zinc oxide transistors: impact of the crystalline structure on the activation energy barrier

机译：负偏置热应力引起的铟锌氧化物晶体管阈值电压漂移的动力学：晶体结构对活化能垒的影响

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摘要

The kinetics of the negative bias thermal stress (NBTS)-induced V~(th) variations of indium zinc oxide (IZO) transistors with different crystallographic qualities were examined based on the stretched-exponential formalism. A poly-crystalline IZO device had a 0.64 eV lower activation barrier energy than an amorphous IZO device under NBTS conditions. This was attributed to the difference in the migration energy barrier between poly-crystalline and amorphous IZO films. For the recovery process, however, the activation energy barriers (～0.75 eV) were independent of the crystal structure. A plausible microscopic mechanism to account for the experimental results is proposed.
机译：基于拉伸指数形式，研究了负偏置热应力（NBTS）诱导的具有不同晶体学性质的铟锌氧化物（IZO）晶体管的V〜（th）变化的动力学。在NBTS条件下，多晶IZO器件的激活势垒能量比非晶IZO器件低0.64 eV。这归因于多晶IZO膜和非晶IZO膜之间迁移能垒的差异。但是，对于恢复过程，活化能垒（〜0.75 eV）与晶体结构无关。提出了一种合理的微观机制来解释实验结果。

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