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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Physics-based analysis of low frequency drain noise-current in Al_xGa_(1?x)N/GaN HFETs
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Physics-based analysis of low frequency drain noise-current in Al_xGa_(1?x)N/GaN HFETs

机译：Al_xGa_（1？x）N / GaN HFET中基于低频漏极噪声电流的基于物理的分析

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摘要

A physics-based theoretical model for the low frequency drain noise-current characteristics of AlGaN/GaN heterojunction field effect transistors (HFETs) is developed based on the number fluctuation noise theory. Founded on the calculation of the ground and first excited subband energy levels of the two-dimensional electron gas (2DEG) at an AlGaN/GaN heterointerface using the variational method, the model incorporates both tunnelling and thermally activated processes of trapping/de-trapping of the 2DEG carriers into and out of the trap sites of the barrier and buffer layers. It is found that the thermally activated process is dominant in the frequency range where a 1/f ~2 bulge signature is observed, whereas the tunnelling mechanism is dominant in the frequency range where a 1/f spectrum supersedes. A dominant trap level in the buffer layer, which is responsible for the 1/f ~2 bulge signature, is estimated by fitting the model with temperature-dependent experimental observations. The theoretical results are in good agreement with experimental data.
机译：基于数量波动噪声理论，建立了基于物理的AlGaN / GaN异质结场效应晶体管（HFET）低频漏极噪声电流特性的理论模型。该模型基于使用变分方法计算AlGaN / GaN异质界面处的二维电子气（2DEG）的地面和第一激发子带能级的模型，该模型结合了隧穿和热激活过程的俘获/去俘获过程。 2DEG载流子进出势垒和缓冲层的陷阱位置。发现热激活过程在观察到1 / f〜2凸起信号的频率范围内占主导地位，而隧穿机理在1 / f频谱取代的频率范围内占主导地位。通过将模型与温度相关的实验观测值拟合，可以估计缓冲层中的主要陷阱能级，该陷阱能级负责1 / f〜2凸起特征。理论结果与实验数据吻合良好。

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