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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Low temperature characteristic of ITO/SiOx/c-Si heterojunction solar cell
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Low temperature characteristic of ITO/SiOx/c-Si heterojunction solar cell

机译：ITO / SiOx / c-Si异质结太阳能电池的低温特性

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摘要

Based on the temperature-dependent measurements and the numerical calculation, the temperature response of the photovoltaic parameters for a ITO/SiOx/c-Si heterojunction solar cell have been investigated in the ascending sorting of 10-300 K. Under unique energy concentrated photon irradiation with the wavelength of 405 nm and power density of 667 mW cm(-2), it was found that the short-circuit current (I-SC) was nonlinearly increased and the open-circuit voltage (V-OC) decreased with temperature. The good passivation of the ITO/c-Si interface by a concomitant SiOx buffer layer leads to the rare recombination of carriers in the intermediate region. The inversion layer model indicated that the band gap of c-silicon was narrowed and the Fermi level of n-type silicon (E-F(n)) tended to that of the intrinsic Fermi level (E-F(i)) (in the middle of band gap) with the increase of the temperature, which lessened the built-in voltage (VD) and thus the V-OC. However, the reduction by 90% of V-OC is attributed to the shift of E-F(n) in c-silicon rather than the energy band narrowing. Through the analysis of the current-voltage relationship and the data fitting, we infer that the series resistance (R-s) is not responsible for the increase of I-SC, but the absorption coefficient and the depletion-width of c-silicon are the causes of the enhancing I-SC. Mostly, the interaction of the photon-generated excess 'cold hole' and the acoustic phonon in n-Si would influence the variation of Iph or ISC with temperature.
机译：基于温度相关的测量和数值计算，研究了ITO / SiOx / c-Si异质结太阳能电池在10-300 K的升序排序中光伏参数的温度响应。在独特的能量集中光子辐射下发现波长为405 nm，功率密度为667 mW cm（-2）时，短路电流（I-SC）随温度非线性增加，开路电压（V-OC）减小。伴随的SiOx缓冲层对ITO / c-Si界面的良好钝化导致中间区域中载流子的罕见重组。反转层模型表明，c型硅的带隙变窄，n型硅的费米能级（EF（n））趋向于本征费米能级（EF（i））（在带的中间）间隙）随着温度的升高而降低，从而降低了内置电压（VD），从而降低了V-OC。但是，V-OC减少90％的原因是c-硅中E-F（n）的移动，而不是能带变窄。通过对电流-电压关系的分析和数据拟合，我们推断串联电阻（Rs）并不是I-SC的增加的原因，但是吸收系数和c-硅的耗尽宽度是造成这种情况的原因增强型I-SC。通常，光子产生的多余“冷孔”与n-Si中的声子相互作用将影响Iph或ISC随温度的变化。

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