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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique
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Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

机译：通过简单的湿法化学刻蚀技术可控地修饰ZnO纳米阵列/棒的末端形状

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摘要

The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes.
机译：通过化学浴沉积法在高导电性Si衬底上合成的取向良好的ZnO纳米阵列/棒在氯化氨水溶液中进行化学蚀刻。在该报告中实现了ZnO纳米阵列/棒的明显的末端形状修饰。 ZnO纳米阵列/棒的六边形截头端变为金字塔形，随着刻蚀时间的增加，ZnO纳米阵列/棒的直径逐渐减小。基于提出的演化模型，探讨了湿法刻蚀工艺的演化机理。光致发光测量表明，湿法刻蚀后ZnO纳米阵列/棒的近带边缘发射增加。通过这种简单的湿法刻蚀技术，可以在高导电性Si衬底上对ZnO纳米阵列/棒进行可控的末端形状修饰，这将进一步探索ZnO在具有各种末端形状的场致发射器件和基于1D的纳米器件中的应用。

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