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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+ implantation
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A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+ implantation

机译：通过极低能量的热O +注入合成超薄SOI的新机理

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摘要

Extremely low-energy oxygen implantations at 10 keV in silicon were challengingly performed to directly synthesize ultrathin silicon-on-insulator (SOI) structure separated by a buried oxide (BOX) layer. We quantitatively investigated the optimum condition and the formation mechanism of homogeneous and continuous stoichiometric SOI/BOX structure. In this study, oxygen ions were implanted into Si(0 0 1) substrates with keeping the temperatures at 500, 800, and 1000 degrees C with ion-fluences from 0.5 to 2.0 x 10(17) ions cm(-2). These samples were then postannealed at high temperatures from 950 to 1150 degrees C in Ar ambient for several hours. We found that ultrathin stoichiometric SOI/BOX structure with less than 20 nm thick was synthesized by oxygen implantation with an ion dose of 1.0 x 10(17) ions cm(-2) from 500 degrees C to 800 degrees C followed by annealing at a significantly low temperature of 1050 degrees C for 5 h. According to the RBS-channeling analysis, the crystallinity was excellent as quality as that of the SOI structure formed by a wafer-bonding method. We found that the BOX layer was finally formed around the deeper end of the oxygen distribution in the as-implanted sample, though the depth of the BOX formation was much deeper than the projected range of oxygen and the damage peak of silicon. The formation process of the SOI/BOX structure proposed so far could not be applicable to the present conditions for ultrathin SOI/BOX synthesis by extremely low-energy implantation followed by low-temperature annealing. We thus suggested a novel mechanism of the ultrathin SOI/BOX synthesis as follows. The mechanism during the thermal treatment was demonstrated that the recrystallization of the damaged Si layers induced by ion irradiation took place from the very surface with relatively less irradiation-damages toward deeper layers with sweeping interstitial oxygen atoms, and the condensed oxygen atoms finally synthesized the stoichiometric BOX layer.
机译：极富挑战性地进行了10 keV的硅中极低能量的氧注入，以直接合成被掩埋氧化物（BOX）层隔开的超薄绝缘体上硅（SOI）结构。我们定量研究了均匀和连续化学计量SOI / BOX结构的最佳条件和形成机理。在这项研究中，将氧离子注入到Si（0 0 1）基板中，同时将温度保持在500、800和1000摄氏度，离子通量从0.5到2.0 x 10（17）离子cm（-2）。然后将这些样品在950到1150摄氏度的高温下于Ar环境中进行数小时后退火。我们发现厚度小于20 nm的超薄化学计量SOI / BOX结构是通过在500℃至800℃的温度下以1.0 x 10（17）离子cm（-2）的离子剂量注入氧，然后在200℃退火而合成的1050摄氏度的低温持续5小时。根据RBS-通道分析，结晶度与通过晶片结合法形成的SOI结构的结晶度一样优异。我们发现，尽管BOX形成的深度比氧气的预计射程和硅的破坏峰要深得多，但BOX层最终还是在氧分布的较深端附近形成。迄今为止提出的SOI / BOX结构的形成工艺不能适用于通过极低能量的注入然后进行低温退火来超薄SOI / BOX合成的当前条件。因此，我们提出了一种超薄SOI / BOX合成的新机制，如下所示。热处理过程中的机理表明，离子辐照引起的受损Si层的重结晶是从具有相对较小辐照损伤的表面向具有较宽的间隙氧原子的较深层发生的，最终缩合的氧原子合成了化学计量BOX层。

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