High hole mobility GeSn on insulator formed by self-organized seeding lateral growth

Liu Zhi; Wen Juanjuan; Zhang Xu; Li Chuanbo; Xue Chunlai; Zuo Yuhua; Cheng Buwen; Wang Qiming

首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >High hole mobility GeSn on insulator formed by self-organized seeding lateral growth

【24h】

High hole mobility GeSn on insulator formed by self-organized seeding lateral growth

机译：自组织种子横向生长形成的绝缘体上的高空穴迁移率GeSn

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Tensile strained single-crystal GeSn on insulator (GSOI) was obtained using self-organized seeding lateral growth. Segregation of Sn atoms and Sn distribution occurred during the lateral growth of the GeSn stripe. At both edges of the GSOI, Sn concentration distribution was found in good agreement with calculation based on the Scheil equation. P-channel metal-oxide-semiconductor field effect transistors were fabricated using the GSOI materials. Good transistor performance with the low field peak hole mobility of 383 cm(2) V-1 s(-1) was obtained, which indicated the high quality of this GSOI structure.

机译：使用自组织种子横向生长获得绝缘体上的拉伸应变单晶GeSn（GSOI）。在GeSn条纹的横向生长过程中，发生了Sn原子的偏析和Sn的分布。在GSOI的两个边缘，发现Sn浓度分布与基于Scheil方程的计算非常吻合。使用GSOI材料制造了P沟道金属氧化物半导体场效应晶体管。获得了良好的晶体管性能以及383 cm（2）V-1 s（-1）的低场峰值空穴迁移率，这表明该GSOI结构的高质量。

著录项

来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2015年第44期|共5页
作者
Liu Zhi; Wen Juanjuan; Zhang Xu; Li Chuanbo; Xue Chunlai; Zuo Yuhua; Cheng Buwen; Wang Qiming;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
GeSn on insulator; hole mobility; lateral growth;

机译：GeSn在绝缘体上;空穴迁移率;侧向生长;

相似文献

外文文献
中文文献
专利

1. High hole mobility GeSn on insulator formed by self-organized seeding lateral growth [J] . Liu Zhi, Wen Juanjuan, Zhang Xu, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2015,第44期

机译：自组织种子横向生长形成的绝缘体上的高空穴迁移率GeSn
2. Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer [J] . Masashi Kurosawa, Noriyuki Taoka, Mitsuo Sakashita, Applied Physics Letters . 2013,第10期

机译：表面氧化物层辅助绝缘子上的液态Sn驱动的多晶硅GeSn的横向生长
3. Single-crystalline laterally graded GeSn on insulator structures by segregation controlled rapid-melting growth [J] . Kurosawa Masashi, Tojo Yuki, Matsumura Ryo, Applied Physics Letters . 2012,第9期

机译：通过隔离控制的快速熔化生长在绝缘体结构上的单晶横向渐变GeSn
4. Rapid-melting-growth of Ge on insulator using Cobalt (Co) induced-crystallized Ge as the seed for lateral growth [C] . 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology . 2010

机译：以钴（Co）诱导结晶的Ge为横向生长的晶种，在绝缘子上Ge的快速熔化生长
5. Hole mobility in strained germanium and vanadium-III p-channel inversion layers with self-consistent valence subband structure and high-k insulators. [D] . Zhang, Yan. 2010

机译：具有自洽价子带结构和高k绝缘体的应变锗和钒III p沟道反型层中的空穴迁移率。
6. High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization [O] . Kaoru Toko, Ryota Yoshimine, Kenta Moto, -1

机译：通过控制前体原子密度以进行固相结晶而形成的绝缘体上的高空穴迁移率多晶Ge
7. High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization [O] . Kaoru Toko, Ryota Yoshimine, Kenta Moto, 2017

机译：通过控制固态结晶前体原子密度形成的绝缘体上的高空间迁移率多晶GE
8. Lateral Epitaxy by Seeded Solidification for Growth of Single-Crystal Si Films on Insulators [R] . Fan, J. C., Geis, M. W., Tsaur, B. Y. 1980

机译：种子凝固外延生长在绝缘子上的单晶硅薄膜生长

High hole mobility GeSn on insulator formed by self-organized seeding lateral growth

摘要

著录项

相似文献

相关主题

期刊订阅