...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Non-destructive method for strain imaging in an individual GaN nanorod by confocal Raman technique
【24h】

Non-destructive method for strain imaging in an individual GaN nanorod by confocal Raman technique

机译：共聚焦拉曼技术在单个GaN纳米棒中进行应变成像的无损方法

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

GaN based layer structures on highly lattice mismatched substrates are widely used for electronic and optoelectronic devices. Top down etched, GaN based nanorod structures are mainly studied due to their more effective strain relaxation. The previous measurements on the strain state of these structures have been performed either on single detached nanorods or on ensembles of nanorods still on the substrate. Here we demonstrate a technique based on confocal Raman scattering spectroscopy to probe the strain state of a single GaN nanorod still on the original substrate non-destructively. Both lateral and depth resolved imaging is achieved close to the diffraction limit of light. We observe that a GaN nanorod on the substrate is compressively strained throughout. The strain decreases from the base of the nanorod towards the top surface, but the top surface is still compressively strained. The detached GaN nanorod is less compressively strained overall, and the strain relaxes from the center towards all the edges.
机译：高度晶格失配衬底上的GaN基层结构被广泛用于电子和光电设备。自上而下蚀刻的，基于GaN的纳米棒结构的研究主要是由于其更有效的应变松弛。这些结构的应变状态的先前测量是在单个分离的纳米棒上或仍在基板上的纳米棒集合体上进行的。在这里，我们演示了一种基于共焦拉曼散射光谱技术的技术，该技术可以无损地探测仍在原始基板上的单个GaN纳米棒的应变状态。横向和深度分辨成像均接近光的衍射极限。我们观察到衬底上的GaN纳米棒始终被压缩应变。应变从纳米棒的底部向顶表面减小，但是顶表面仍然受到压缩应变。分离的GaN纳米棒总体上压缩应力较小，并且应变从中心向所有边缘松弛。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号