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Core-Shell Tunnel Junction Nanowire White-Light-Emitting Diode

机译：核心壳隧道结纳米线白色发光二极管

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摘要

We have demonstrated a new class of phosphor-free white LEDs with the use of tunnel junction structure in nonpolar core-shell InGaN nanowires. It is confirmed that the tunnel junction based nanowire LEDs can eliminate the use of the resistive p-GaN:Mg contact layer, leading to significantly enhanced hole injection and dramatically reduced voltage loss. The nonpolar core-shell nanowire heterostructure showed the enhanced carrier injection efficiency through the widened shell n-GaN contact area. The TEM analysis verified that the core-shell Al tunnel junction layers were uniformly grown on nonpolar surfaces of the GaN wurtzite crystal nanowire structure. We have also showed the monolithic integration of multiple-color emission on a single chip by using the multiple-stacked tunnel junction core-shell nanowire heterostructure. Compared to the conventional film based quantum well LEDs, the demonstrated nonpolar core-shell tunnel junction nanowire LEDs will be a very promising candidate for future solid-state lighting applications as well as phosphor-free white LEDs.
机译：我们已经展示了一种新的无磷白LED，在非极性核心壳IngaN纳米线中使用隧道结结构。确认隧道连接基的纳米线LED可以消除电阻P-GaN：Mg接触层的使用，导致显着增强的空穴注入并显着降低电压损失。非极性核 - 壳纳米线异质结构通过加宽的壳体N-GaN接触面积显示了增强的载体注入效率。 TEM分析证明了核心 - 壳Al隧道结层在GaN Wurtzite晶体纳米线结构的非极性表面上均匀生长。我们还通过使用多堆叠的隧道结芯壳纳米线异质结构显示了单芯片上多色发射的单片集成。与传统的基于膜的量子阱LED相比，所示的非极性芯壳隧道结纳米线LED将是未来固态照明应用以及无磷的白色LED的非常有希望的候选者。

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