• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nano letters >Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures
【24h】

Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures

机译：沿半导体异质结构中沿线脱位的快速扩散和偏析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Heterogeneous integration of semiconductors combines the functionality of different materials, enabling technologies such as III-V lasers and solar cells on silicon and GaN LEDs on sapphire. However, threading dislocations generated during the epitaxy of these dissimilar materials remain a key obstacle to the success of this approach due to reduced device efficiencies and reliability. Strategies to alleviate this and understand charge carrier recombination at threading dislocations now need an accurate description of the structure of threading dislocations in semiconductor heterostructures. We show that the composition around threading dislocations in technologically important InGaAs/GaAs/Ge/Si heterostructures are indeed different from that of the matrix. Site-specific atom probe tomography enabled by electron channeling contrast imaging reveals this at individual dislocations. We present evidence for the simultaneous fast diffusion of germanium and indium up and down a dislocation, respectively, leading to unique compositional profiles. We also detect the formation of clusters of metastable composition at the interface between Ge and GaAs, driven by intermixing in these two nearly immiscible materials. Together, our results have important implications for the properties of dislocations and interfaces in semiconductors and provide new tools for their study.
机译：半导体的异构整合结合了不同材料的功能，使得在蓝宝石上的硅和GaN LED上的III-V激光器和太阳能电池等技术。然而，由于降低的装置效率和可靠性，在这些不同材料的外延产生的穿线脱位仍然是这种方法成功的关键障碍。缓解这一点的策略和理解螺纹脱位时的电荷载体重组现在需要准确描述半导体异质结构中的穿线脱位的结构。我们表明，在技术重要的IngaAs / GaAs / Ge / Si异质结构上围绕穿线脱位周围的组合物确实不同于基质的脱位。通过电子信道对比度成像使能的特定于特定的原子探测断层扫描显示在单独的脱位上。我们呈现出同时快速扩散锗和铟的快速扩散，分别远离脱位，导致独特的组成谱。我们还检测GE和GaAs之间的界面中的亚稳态组合物的形成，通过混合在这两个几乎不加混材料中驱动。我们的结果在一起对半导体中位错和界面的性质具有重要意义，并为他们的研究提供新工具。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号