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首页> 外文期刊>Nano letters >Unusual Oxygen Partial Pressure Dependence of Electrical Transport of Single-Crystalline Metal Oxide Nanowires Grown by the Vapor-Liquid-Solid Process
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Unusual Oxygen Partial Pressure Dependence of Electrical Transport of Single-Crystalline Metal Oxide Nanowires Grown by the Vapor-Liquid-Solid Process

机译：汽液固体工艺生长的单晶金属氧化物纳米线电传输的异常氧分压依赖性

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摘要

In general, the electrical conductivities of n-type semiconducting metal oxide nanostructures increase with the decrease in the oxygen partial pressure during crystal growth owing to the increased number of crystal imperfections including oxygen vacancies. In this paper, we report an unusual oxygen partial pressure dependence of the electrical conductivity of single-crystalline SnO2 nanowires grown by a vapor-liquid-solid (VLS) process. The electrical conductivity of a single SnO2 nanowire, measured using the four-probe method, substantially decreases by 2 orders of magnitude when the oxygen partial pressure for the crystal growth is reduced from 10(-3) to 10(-4) Pa. This contradicts the conventional trend of n-type SnO2 semiconductors. Spatially resolved single-nanowire electrical transport measurements, microstructure analysis, plane-view electron energy-loss spectroscopy, and molecular dynamics simulations reveal that the observed unusual oxygen partial pressure dependence of the electrical transport is attributed to the intrinsic differences between the two crystal growth interfaces (LS and VS interfaces) in the critical nucleation of the crystal growth and impurity incorporation probability as a function of the oxygen partial pressure. The impurity incorporation probability at the LS interface is always lower than that at the VS interface, even under reduced oxygen partial pressures.
机译：通常，n型半导体金属氧化物纳米结构的电导率随着包括氧空位的晶体缺陷数量的增加而增加，晶体生长期间的氧分压的降低增加。在本文中，我们报告了通过蒸汽 - 液体固体（VLS）加工生长的单晶SnO2纳米线的电导率的异常氧分压依赖性。使用四探针方法测量的单个SnO2纳米线的导电率，当晶体生长的氧分压减少到10（-4）PA时，当氧气分压减少时，基本上降低了2个级。这个与n型SnO2半导体的常规趋势相矛盾。空间分辨单纳米线电传输的测量，组织分析，平面视图电子能量损失光谱法和分子动力学模拟表明，该电传输的所观察到的不寻常的氧分压依存性是由于两个晶体生长界面之间的固有差异（LS和VS界面）在晶体生长和杂质掺入概率的临界成核中作为氧分压的概率。即使在减少氧气压力下，LS接口的杂质掺入概率始终低于VS接口的概率。

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