• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Calculations of defect states in various sizes of InN nanowires
【24h】

Calculations of defect states in various sizes of InN nanowires

机译：各种尺寸纳米线的缺陷状态计算

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

InN has received considerable attentions due to its small band-gap and unique properties in the III-nitride family. Understanding the effects of defects on optoelectronic properties of InN nanowire is essential for exploring its applications in future nanodevices. In this work, we have systematically calculated defect states in InN nanowires based on density-functional theory. Hydrogen passivation and several potential intrinsic point defects are considered in various sizes of nanowires, as well as charged defect states. For small-sized hexagonal nanowires, V-N at N-poor condition or N-In at N-rich condition is the most stable defect. Whereas for larger-sized nanowires, V-N and In-N defects are competing when the N chemical potential changes, showing obvious size effect of the defect stability on the nanowire surface. Those defect states change the electronic structure of the nanowires drastically by introducing empty bands or deep level and provide possibility to tailor the optical properties in terms of forming different stable defects.
机译：InN的受到了相当多的关注，由于在III族氮化物系列其小的带隙和独特的性质。理解的缺陷上的InN纳米线的光电性能的影响是在未来的纳米器件探索其应用至关重要。在这项工作中，我们有系统地计算出缺陷态基于密度泛函理论的InN纳米线。氢钝化和几个潜在的本征点缺陷在各种尺寸的纳米线，以及带电的缺陷态被考虑。对于小尺寸的六边形的纳米线，V-N在条件N-二差或N-以在富氮的条件是最稳定的缺陷。而对于较大尺寸的纳米线，V-N和In-N缺陷竞争当N化学势的变化，示出了纳米线表面上的缺陷的稳定性明显的尺寸效应。这些缺陷状态改变纳米线的电子结构，大幅度通过引入空带或深能级和在形成不同的稳定缺陷的观点出发，以提供裁缝可能性的光学性质。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号