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首页> 外文期刊>Nanotechnology >Nanowire morphology and particle phase control by tuning the In concentration of the foreign metal nanoparticle
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Nanowire morphology and particle phase control by tuning the In concentration of the foreign metal nanoparticle

机译：纳米线形态和粒子相控制通过调谐外纳米颗粒的浓度

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摘要

Controllable particle assisted growth (PAG) of III-V nanowires is today almost exclusively done with Au, Ga or In nanoparticles, whereas other metals often yield nanowires with uncontrolled growth directions. To improve the control of the initial growth direction in PAG, independent of choice of metal, we propose to initiate nanowire growth from a group-III-rich foreign metal particle. For III-V nanowire growth, the group III concentration of the particle can be made to increase or decrease with the relative supply of group III and group V material, which can be used to promote the liquid phase that is necessary for vapor-liquid-solid growth. In this paper, 30 nm Pd nanoparticles are used to develop growth conditions for In-rich PAG of InAs nanowires. The particle size evolution for different growth times and V/III ratios is correlated with changes in nanowire density and morphology. In addition, we demonstrate In-rich Co, Pd, Pt and Rh nanoparticles and optimized In-rich PAG from Au and Pd seeds. The Au and Pd seeded nanowires are remarkably similar and by tuning the particle composition we trigger a morphological change. The vertical nanowire morphology is associated with In-rich nanoparticles that contain a liquid phase. The curly nanowire morphology, with random growth directions have an In concentration less than or equal to that of the most In rich compound of the seed metal-In system.
机译：III-V纳米线的可控颗粒辅助生长（PAG）几乎完全由Au，Ga或纳米颗粒完成，而其他金属通常通常会产生具有不受控制的生长方向的纳米线。为了改善PAG中初始生长方向的控制，与金属的选择无关，我们提出从富含群体的外墨颗粒开始纳米线生长。对于III-V纳米线的生长，可以使颗粒的III族浓度随着III族和V族材料的相对供应而增加或降低，其可用于促进蒸汽液体所需的液相 - 固体生长。在本文中，使用30nM Pd纳米颗粒用于对INA纳米线的富含富有的PAG发育生长条件。不同生长时间和v / III比率的粒度演变与纳米线密度和形态的变化相关。此外，我们证明了丰富的CO，Pd，Pt和Rh纳米颗粒，并从Au和Pd籽中优化了丰富的洞穴。 Au和Pd叶片纳米线非常相似，通过调节颗粒组合物，我们引发形态变化。垂直纳米线形态与含有液相的含有含量含有液相的纳米颗粒有关。随机生长方向的卷曲纳米线形态具有小于或等于最富含种子金属系统的富含化合物的浓度。

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