Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

Calabrese G.; Gao G.; van Treeck D.; Corfdir P.; Sinito C.; Auzelle T.; Trampert A.; Geelhaar L.; Brandt O.; Fernandez-Garrido S.

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Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

机译：Ti / Al2O3在GaN纳米线的分子束外延期间的界面反应

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We investigate the occurrence of interfacial reactions during the self-assembled formation of GaN nanowires on Ti/Al2O3 (0001) substrates in plasma-assisted molecular beam epitaxy. The conditions typical for the synthesis of ensembles of long nanowires (1 mu m) are found to promote several chemical reactions. In particular, the high substrate temperature leads to the interdiffusion of Al and O at the Ti/Al2O3 interface resulting in the formation of AL(x)Ti(y)O(1)(-x-y) and TixO1-x compounds. Furthermore, O is found to incorporate into the nanowires degrading their luminescence by heavy n-type doping. At the same time, impinging Ga and N species react with the substrate giving rise to the simultaneous formation of single-crystalline TiN and GaxTiyO1-x-y compounds. The latter compounds tend to form hillocks at the substrate surface, on top of which nanowires elongate with large tilt angles with respect to the substrate normal. We develop here a specific process in order to mitigate the detrimental effects of these interfacial reactions, while maintaining the low areal density and absence of coalescence which is the strong asset of growing nanowires on Ti/Al2O3. We find that the combination of a thick Ti film with an intentional low temperature nitridation step preceding nanowire growth and a limited growth temperature results in ensembles of uncoalesced and well-oriented nanowires with luminescence properties comparable to those of standard GaN nanowires prepared on Si. All these properties, together with the inherent benefits of integrating semiconductors on metals, make the present materials combination a promising platform for the further development of group-III nitride nanowire-based devices.

机译：我们研究了在等离子体辅助分子束外延上的Ti / Al 2 O 3（0001）衬底上的GaN纳米线的自组装形成期间的界面反应的发生。发现长纳米线合成合成的典型条件（＆ 1 mu m）促进几种化学反应。特别地，高衬底温度导致Al和O在Ti / Al2O3界面处的相互扩散，从而形成Al（x）Ti（Y）O（1）（1）（ - X-Y）和TixO1-x化合物。此外，发现o通过重的n型掺杂将其发光降解到纳米线中。同时，撞击Ga和N物种与底物反应，从而产生单晶锡和GAXTIYO1-X-Y化合物的同时形成。后一种化合物倾向于在基板表面形成小丘，在纳米线上，纳米线相对于基板正常地具有大的倾斜角度。我们在这里发展了一个特定的过程，以减轻这些界面反应的不利影响，同时保持低位密度和没有聚结的，这是Ti / Al 2 O 3上生长纳米线的强力。我们发现厚Ti膜与有意的低温氮化步骤的组合在纳米线的生长和有限的生长温度导致有限的生长温度，导致未甲状腺和面向良好的纳米线，具有与在Si上制备的标准GaN纳米线相当的发光性能。所有这些属性以及整合金属上的固有益处，使本发明的材料组合成为III族氮化物纳米线的进一步发展的有希望的平台。

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《Nanotechnology》 |2019年第11期|共9页
作者
Calabrese G.; Gao G.; van Treeck D.; Corfdir P.; Sinito C.; Auzelle T.; Trampert A.; Geelhaar L.; Brandt O.; Fernandez-Garrido S.;
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作者单位

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

Leibniz Inst Forsch Verbund Berlin eV Paul Drude Inst Festkorperelekt Hausvogteipl 57 D-10117 Berlin Germany;

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正文语种 eng
中图分类特种结构材料;
关键词
GaN nanowires; metals; interfacial reactions; molecular beam epitaxy;

机译：GaN纳米线;金属;界面反应;分子束外延;

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专利

1. Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 [J] . Calabrese G., Gao G., van Treeck D., Nanotechnology . 2019,第11期

机译：Ti / Al2O3在GaN纳米线的分子束外延期间的界面反应
2. Growth and characterization of dilute nitride GaN_xP_(1-x) nanowires and GaN_xP_(1-x)/GaN_yP_(1-y) core/shell nanowires on Si (111) by gas source molecular beam epitaxy [J] . S. Sukrittanon, Y. J. Kuang, A. Dobrovolsky, Applied Physics Letters . 2014,第7期

机译：气源分子束外延在氮化硅（111）上生长和表征稀氮化物GaN_xP_（1-x）纳米线和GaN_xP_（1-x）/ GaN_yP_（1-y）核/壳纳米线
3. Erratum: Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil (Applied Physics Letters (2016) 108 (202101) DOI: 10.1063/1.4950707) [J] . Applied Physics Letters . 2017,第21期

机译：勘误表：柔性Ti箔上单晶GaN纳米线的分子束外延（Applied Physics Letters（2016）108（202101）DOI：10.1063 / 1.4950707）
4. Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy [C] . Pinar Dogan, Oliver Brandt, Christian Hauswald, Gallium nitride materials and devices VII . 2012

机译：分子束外延法研究纳米线模板的形貌对氮化硅纳米线在硅上聚结过度生长的影响
5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” Appl. Phys. Lett. 108, 202101 (2016) [O] . Gabriele Calabrese, Pierre Corfdir, Guanhui Gao, 2017

机译：错误：“柔性Ti箔上的单晶GaN纳米线的分子束外延”苹果酱。物理。吧。 108,202101（2016）
8. Steady-State and Transient Photoconductivity in c-Axis GaN Nanowires Grown by Nitrogen-Plasma-Assisted Molecular Beam Epitaxy [R] . Sanford, N. A., Blanchard, P. T., Bertness, K. A., 2010

机译：氮等离子体辅助分子束外延生长的c轴GaN纳米线的稳态和瞬态光电导

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

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