Tuning the electronic structure of single-walled carbon nanotube by high-pressure H-2 exposure

Kang Hojin; Hong Sung Ju; Park Min; Jang Hyun-Seok; Nam Kiin; Choi Soobong; Kim Byung Hoon; Park Yung Woo

首页> 外文期刊>Nanotechnology >Tuning the electronic structure of single-walled carbon nanotube by high-pressure H-2 exposure

【24h】

Tuning the electronic structure of single-walled carbon nanotube by high-pressure H-2 exposure

机译：高压H-2曝光调整单壁碳纳米管的电子结构

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on an electronic structure change of single-walled carbon nanotube (SWNT) on hexagonal boron nitride due to electron doping via high-pressure H-2 exposure. The fractional coverage of hydrogenated carbon atom is estimated to be at least theta = 0.163 from the in situ I-ds-V-g measurements of the release process. Raman spectroscopy and x-ray photoelectron spectroscopy were carried out to support the in situ electrical measurements. In particular, we used the dissociative Langmuir-type model to yield the desorption coefficient k(des) by fitting it to the in situ electrical data. Finally, we applied this hydrogenation method to the SWNT network on the commercial Si/SiO2 substrate to open the possibility of the scalable n-type semiconducting SWNT FETs.

机译：我们通过高压H-2曝光引起的电子掺杂引起的单壁碳纳米管（SWNT）的电子结构改变报告了六角形氮化物上的电子结构变化。从释放过程的原位I-DS-V-G测量中估计氢化碳原子的分数覆盖率至少为θ= 0.163。进行拉曼光谱和X射线光电子能谱，以支持原位电测量。特别地，我们使用了解离朗马型模型来产生解吸系数K（DES），通过将其拟合到原位电气数据。最后，我们将该氢化方法应用于商业Si / SiO2基板上的SWNT网络，以打开可伸缩的n型半导体SWNT FET的可能性。

著录项

来源
《Nanotechnology》 |2019年第6期|共6页
作者
Kang Hojin; Hong Sung Ju; Park Min; Jang Hyun-Seok; Nam Kiin; Choi Soobong; Kim Byung Hoon; Park Yung Woo;
展开▼
作者单位

Seoul Natl Univ Dept Phys &

Astron Seoul 08826 South Korea;

Leibniz Univ Hannover Inst Festkorperphys D-30167 Hannover Germany;

KIST Jeonbuk 55324 South Korea;

Incheon Natl Univ Dept Phys Incheon 22012 South Korea;

Incheon Natl Univ Dept Phys Incheon 22012 South Korea;

Incheon Natl Univ Dept Phys Incheon 22012 South Korea;

Incheon Natl Univ Dept Phys Incheon 22012 South Korea;

Seoul Natl Univ Inst Appl Phys Seoul 08826 South Korea;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
single-walled carbon nanotubes; hexagonal boron nitride; hydrogenation; high-pressure H-2; n-type doping; in situ electrical measurements;

机译：单壁碳纳米管;六边形氮化物;氢化;高压H-2;n型掺杂;原位电测量;

相似文献

外文文献
中文文献
专利

1. Tuning the electronic structure of single-walled carbon nanotube by high-pressure H-2 exposure [J] . Kang Hojin, Hong Sung Ju, Park Min, Nanotechnology . 2019,第6期

机译：高压H-2曝光调整单壁碳纳米管的电子结构
2. Electrochemical tuning of electronic structure of single-walled carbon nanotubes: in-situ raman and vis-NIR study [J] . Ladislav Kavan, Peter Rapta, Lothar Dunsch, The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 2001,第44期

机译：单壁碳纳米管电子结构的电化学调节：原位拉曼光谱和vis-NIR研究
3. Tailoring the electrocatalytic oxygen reduction reaction pathway by tuning the electronic states of single-walled carbon nanotubes [J] . Hu Rongtao, Wu Chuxin, Hou Kun, Carbon: An International Journal Sponsored by the American Carbon Society . 2019,第期

机译：通过调整单壁碳纳米管的电子状态来定制电催化氧还原反应途径
4. Electronic structures of single-walled carbon nanotubes studied by NMR [C] . X. P. Tang, A. Kleinhammes, H. Shimoda, MRS Meeting . 2000

机译：NMR研究单壁碳纳米管的电子结构
5. Structure-Processing-Property Interrelationships of Vapor Grown Carbon Nanofiber, Single-Walled Carbon Nanotube and Functionalized Single-Walled Carbon Nanotube - Polypropylene Nanocomposites. [D] . Radhakrishnan, Vinod Karumathil. 2010

机译：气相生长的碳纳米纤维，单壁碳纳米管和功能化单壁碳纳米管-聚丙烯纳米复合材料的结构-工艺-性能相互关系。
6. Electronic platform for real-time multi-parametric analysis of cellular behavior post-exposure to single-walled carbon nanotubes [O] . Reem Eldawud, Alixandra Wagner, Chenbo Dong, -1

机译：单平台碳纳米管暴露后细胞行为实时多参数分析的电子平台
7. Single-Walled Carbon Nanotubes: Solution-Processing of High-Purity Semiconducting Single-Walled Carbon Nanotubes for Electronics Devices (Adv. Mater. 9/2019) [O] . Song Qiu, Kunjie Wu, Bing Gao, 2019

机译：单壁碳纳米管：用于电子设备的高纯度半导体单壁碳纳米管的溶液加工（ADV。Mater。9/2019）

Tuning the electronic structure of single-walled carbon nanotube by high-pressure H-2 exposure

摘要

著录项

相似文献

相关主题

期刊订阅