Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range

Stehr J. E.; Balagula R. M.; Jansson M.; Yukimune M.; Fujiwara R.; Ishikawa F.; Chen W. M.; Buyanova I. A.

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Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range

机译：生长温度和热退火对近红外光谱范围发射GANAS纳米线光学质量的影响

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We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at similar to 1 mu m, aiming to increase their light emitting efficiency. A slight change in growth temperature is found to critically affect optical quality of the active GaNAs shell and is shown to result from suppressed formation of non-radiative recombination (NRR) centers under the optimum growth temperature. By employing the optically detected magnetic resonance spectroscopy, we identify gallium vacancies and gallium interstitials as being among the dominant NRR defects. The radiative efficiency of the NWs can be further improved by post-growth annealing at 680 degrees C, which removes the gallium interstitials.

机译：我们报告了GaAs / GANAS / GAAs /壳/壳/壳纳米线（NW）结构的增长条件的优化报告，其在类似于1μm的情况下发射，旨在提高其发光效率。发现生长温度的微小变化是影响活性GANAS壳的光学质量，并显示出在最佳生长温度下抑制非辐射重组（NRR）中心的形成。通过采用光学检测的磁共振光谱，我们鉴定镓空位和镓间质缺乏症是主要的NRR缺陷中。通过在680℃的680℃下的生长后退火可以进一步提高NWS的辐射效率，从而除去镓间质性。

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来源
《Nanotechnology》 |2020年第6期|共6页
作者
Stehr J. E.; Balagula R. M.; Jansson M.; Yukimune M.; Fujiwara R.; Ishikawa F.; Chen W. M.; Buyanova I. A.;
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作者单位

Linkoping Univ Dept Phys Chem &

Biol SE-58183 Linkoping Sweden;

Linkoping Univ Dept Phys Chem &

Biol SE-58183 Linkoping Sweden;

Linkoping Univ Dept Phys Chem &

Biol SE-58183 Linkoping Sweden;

Ehime Univ Grad Sch Sci &

Engn Matsuyama Ehime 7908577 Japan;

Ehime Univ Grad Sch Sci &

Engn Matsuyama Ehime 7908577 Japan;

Ehime Univ Grad Sch Sci &

Engn Matsuyama Ehime 7908577 Japan;

Linkoping Univ Dept Phys Chem &

Biol SE-58183 Linkoping Sweden;

Linkoping Univ Dept Phys Chem &

Biol SE-58183 Linkoping Sweden;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
GaNAs; optically detected magnetic resonance; nanowires;

机译：GANAS;光学检测到的磁共振;纳米线;

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专利

1. Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range [J] . Stehr J. E., Balagula R. M., Jansson M., Nanotechnology . 2020,第6期

机译：生长温度和热退火对近红外光谱范围发射GANAS纳米线光学质量的影响
2. Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs/GaAs quantum well structures [J] . Q. X. Zhao, S. M. Wang, Y. Q. Wei, Applied Physics Letters . 2005,第12期

机译：生长温度和生长后热退火对GaNAs / GaAs量子阱结构中载流子定位和深能级发射的影响
3. Effect of rapid thermal annealing on the optical properties of MBE growth GaNAs films [J] . Z.L. Liu, P.P. Chen, T.X. Li, Journal of Luminescence . 2006,第期

机译：快速热退火对MBE生长GaNAs薄膜光学性能的影响
4. The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition [C] . Hyunseok Na, Hyun Jin Kim, Soon-Yong Kwon, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：通过金属化学气相沉积在低温下薄GANAS癫痫术期间立方GANAS阶段的形成
5. Gallium nitride growth by RF-plasma assisted molecular bean epitaxy: Determination of surface stoichiometry by RHEED-TRAXS, annealing of gallium nitride:beryllium and the effects of active nitrogen species, surface polarity, and excess gallium-overpressure on high temperature limits. [D] . VanMil, Brenda. 2005

机译：射频等离子体辅助分子外延生长氮化镓：通过RHEED-TRAXS测定表面化学计量，氮化镓：铍退火以及活性氮种类，表面极性和过量的镓超压对高温极限的影响。
6. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature [O] . Ya-Chu Hsu, Yu-Chen Hung, Chiu-Yen Wang 2017

机译：通过低温快速热退火工艺控制生长高均匀性的硒化铟（In2Se3）纳米线
7. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature [O] . Ya-Chu Hsu, Yu-Chen Hung, Chiu-Yen Wang 2017

机译：通过在低温下通过快速热退火工艺控制生长高均匀性硒化烯烃（In2Se3）纳米线

Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range

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