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首页> 外文期刊>Nanotechnology >Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes
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Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes

机译：具有Si作为底电极的外延单晶立方Y-HFO2 RRAM可靠的电阻切换

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摘要

Previous studies have mainly focused on the resistive switching (RS) of amorphous or polycrystalline HfO2-RRAM. The RS of single crystalline HfO2 films has been rarely reported. Yttrium doped HfO2 (YDH) thin films were fabricated and successful Y incorporation into HfO2 was confirmed by x-ray photoemission spectroscopy. A pure cubic phase of YDH and an abrupt YDH/Si interface were obtained and verified by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. A Pt/YDH/n(++)-Si heterostructure using Si as the bottom electrode was fabricated, which shows stable RS with an ON/OFF ratio of 100 and a reliable data retention (10(4) s). The electron transport mechanism was investigated in detail. It indicates that hopping conduction is dominating when the device is at a high resistance state, while space charge limited conduction acts as the dominant factor at a low resistance state. Such behavior, which is different from devices using TiN or Ti as electrodes, was attributed to the Y doping and specific YDH/Si interface. Our results demonstrate a proof of concept study to use highly doped Si as bottom electrodes along with single crystalline YDH as insulator layer for such RRAM applications as wireless sensors and synaptic simulation.
机译：以前的研究主要集中在无定形或多晶HFO2-RRAM的电阻切换（RS）上。很少报道单晶HFO2薄膜的rs。用X射线照相激光谱证实，制造钇掺杂的HFO2（YDH）薄膜并成功掺入HFO 2中。通过X射线衍射，拉曼光谱和透射电子显微镜获得纯度的YDH和突然YDH / Si界面的纯度立方相。使用Si作为底部电极的Pt / YDH / N（++） - Si异质结构，其显示出稳定的Rs，其开/关比为100和可靠的数据保持（10（4））。详细研究了电子传输机构。当设备处于高电阻状态时，跳跃传导是主导的，而空间电荷有限的导通在低电阻状态下充当显性因子。这种行为与使用锡或Ti作为电极的设备不同，归因于Y掺杂和特定的YDH / Si接口。我们的结果证明了概念研究证明，使用高度掺杂的Si作为底部电极以及单晶YDH作为绝缘体层，用于这种RRAM应用作为无线传感器和突触模拟。

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