• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Heterogeneous stimuli induced nonassociative learning behavior in ZnO nanowire memristor
【24h】

Heterogeneous stimuli induced nonassociative learning behavior in ZnO nanowire memristor

机译：异质刺激诱导ZnO纳米线忆阻器中的非分配学习行为

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Nonassociative learning is a biologically essential and evolutionarily adaptive behavior in organisms. The bionic simulation of nonassociative learning based on electronic devices is essential to the neuromorphic computing. In this work, nonassociative learning is mimicked by a ZnO nanowire memristor without any other peripheral control circuit. The memristor demonstrates habituation and sensitization behaviors at the electrical and optical stimuli. Typical network-level parametric characteristics of habituation in neuroscience are realized in the memristor. When the heterogeneous stimuli are applied coincidentally, sensitization pulse could be identified by the exceptional response current. The results show that the natural selection rules could be simulated by the current single memristor. A possible mechanism based on the trapping states and adsorption of oxygen at the interface of Au/ZnO is proposed. The implementation of nonassociative learning in a single memristor device paves the way for building neuromorphic systems by simple electronic devices.
机译：非分配学习是生物体中生物学上必需的和进化的适应性行为。基于电子设备的非分配学习的仿生模拟对于神经形态计算至关重要。在这项工作中，非分配学习由ZnO纳米线忆阻器模拟而没有任何其他外围控制电路。回忆晶体在电气和光学刺激上表现出习惯和敏感性。在函馆中实现了神经科学中习惯的典型网络级参数特征。当非均相刺激巧合时，可以通过卓越的响应电流来识别敏化脉冲。结果表明，自然选择规则可以由当前的单个忆阻器模拟。提出了一种基于Au / ZnO界面捕获状态和氧气吸附的可能机理。在单个忆阻器设备中的非分配学习的实现为通过简单的电子设备构建神经形态系统的方式。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号