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Helium focused ion beam irradiation with subsequent chemical etching for the fabrication of nanostructures

机译:氦聚焦离子束照射,随后的化学蚀刻用于制备纳米结构

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摘要

In this paper we demonstrate a nanofabrication technique based on local ion irradiation of silicon dioxide with a focused helium ion beam. The wet etching of silicon dioxide irradiated with a focused helium ion beam is described in a two-dimensional case both numerically and experimentally. We suggest a model for the etching process based on the distribution of ion induced defects in the irradiated material. The profile of the surface of the etched silicon dioxide is simulated and compared with the results from scanning electron microscopy. Fabrication of a suspended nanostring with a diameter of less than 20 nm by means of etching ion-irradiated material is demonstrated.
机译:本文用聚焦氦离子束展示了基于局部离子照射的基于局部离子照射的纳米制作技术。 用聚焦氦离子束照射的二氧化硅的湿法蚀刻在数字和实验上的二维壳中描述。 我们建议一种基于辐照材料中离子诱导缺陷的分布的蚀刻过程的模型。 模拟蚀刻二氧化硅表面的轮廓并与扫描电子显微镜的结果进行比较。 通过蚀刻离子照射材料制造直径小于20nm的悬浮纳米型纳米型纳米型纳米型纳米型纳米型纳米型纳米型纳米型。

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