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首页> 外文期刊>Nanotechnology >Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction
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Memristor with a ferroelectric HfO2 layer: in which case it is a ferroelectric tunnel junction

机译：具有铁电HFO2层的忆故者：在这种情况下，它是铁电隧道结

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摘要

New interest in the implementation of ferroelectric tunnel junctions has emerged following the discovery of ferroelectric properties in HfO2 films, which are fully compatible with silicon microelectronics technology. The coercive electric field to switch polarization direction in ferroelectric HfO2 is relatively high compared to classical perovskite materials, and thus it can cause the migration of non-ferroelectric charges in HfO2, namely charged oxygen vacancies. The charge redistribution would cause the change of the tunnel barrier shape and following change of the electroresistance effect. In the case of ambiguous ferroelectric properties of HfO2 ultrathin films, this oxygen-driven resistive switching effect can mimic the tunnel electroresistance effect. Here, we demonstrate two separate resistive switching regimes, depending on the applied voltage, in the same memristor device employing a ferroelectric Hf0.5Zr0.5O2 (4.5 nm) layer. The first regime originates from the polarization reversal, whereas the second one is attributed to the accumulation/depletion of the oxygen vacancies at the electrode interface. The modulation of the tunnel barrier causes the enhancement of R-OFF/R-ON ratio in similar to 20 times compared to the tunnel electroresistance effect. The developed device was used to formulate the criteria for unambiguous discrimination between the ferroelectric-and non-ferroelectric resistive switching effects in HfO2-based ferroelectric tunnel junctions.
机译：在HFO2薄膜中发现铁电性能后，已经出现了新兴趣的铁电隧道交界处，其与硅微电子技术完全兼容。与经典钙钛矿材料相比，在铁电HFO2中切换偏振方向的矫顽电场，因此它可以导致HFO2中的非铁电电荷迁移，即带电的氧空位。电荷再分布将导致隧道屏障形状的变化和后续电阻效应的变化。在HFO2超薄膜的模糊铁电性能的情况下，该氧气驱动的电阻切换效果可以模拟隧道电阻效应。这里，我们展示了两个独立的电阻切换制度，取决于所施加的电压，在采用铁电HF0.5ZR0.5O2（4.5nm）层的相同忆阻器装置中。第一个制度源自极化反转，而第二个制度归因于电极界面处的氧空位的累积/耗尽。与隧道电钻效果相比，隧道屏障的调制导致逆/ R-ON比率类似于20次。开发的装置用于制定在基于HFO2的铁电隧道结中的铁电和非铁电阻切换效应之间的明确判别标准。

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