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Modulation of the plasticity of an all-metal oxide synaptic transistor via laser irradiation

机译：通过激光照射调制全金属氧化物突触晶体管的可塑性

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Artificial intelligence devices that can mimic human brains are the foundation for building future artificial neural networks. A key step in mimicking biological neural systems is the modulation of synaptic weight, which is mainly achieved by various engineering approaches using material design, or modification of the device structure. Here, we realize the modulation of the synaptic weight of a Ta2O5/ITO-based all-metal oxide synaptic transistor via laser irradiation. Prior to the deposition of the active layer and electrodes, a femtosecond laser was used to irradiate the surface of the insulator layer. Typical synaptic characteristics such as excitatory postsynaptic current, paired pulse facilitation and long-term potentiation were successfully simulated under different laser intensities and scanning rates. In particular, we demonstrate for the first time that laser irradiation could control the quantity of oxygen vacancies in the Ta2O5 thin film, leading to precise modulation of the synaptic weight. Our research provides an instantaneous (<1 s), convenient and low-temperature approach to improving synaptic behaviors, which could be promising for neuromorphic computing hardware design.
机译：可以模仿人类大脑的人工智能设备是建立未来人工神经网络的基础。模仿生物神经系统的关键步骤是突触重量的调制，其主要通过使用材料设计的各种工程方法实现，或者改变装置结构。这里，我们通过激光照射来实现基于Ta2O5 / ITO基全金属氧化物突触晶体管的突触重的调节。在沉积有源层和电极之前，使用Femtosecond激光照射绝缘层的表面。在不同的激光强度和扫描速率下成功模拟了典型的突触突触电流，配对脉冲促进和长期增强性等典型突触特性。特别是，我们首次证明激光照射可以控制Ta2O5薄膜中的氧空位量，从而精确调制突触重量。我们的研究提供了一种瞬间（<1秒），方便和低温的方法来改善突触行为，这可能对神经形态计算硬件设计有望。

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