Random dopant fluctuations and statistical variability in n-channel junctionless FETs

Akhavan N. D.; Umana-Membreno G. A.; Gu R.; Antoszewski J.; Faraone L.

首页> 外文期刊>Nanotechnology >Random dopant fluctuations and statistical variability in n-channel junctionless FETs

【24h】

Random dopant fluctuations and statistical variability in n-channel junctionless FETs

机译：N沟道连接FET中随机掺杂剂波动及统计变异性

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The influence of random dopant fluctuations on the statistical variability of the electrical characteristics of n-channel silicon junctionless nanowire transistor (JNT) has been studied using three dimensional quantum simulations based on the non-equilibrium Green's function (NEGF) formalism. Average randomly distributed body doping densities of 2 x 10(19), 6 x 10(19) and 1 x 10(20) cm(-3) have been considered employing an atomistic model for JNTs with gate lengths of 5, 10 and 15 nm. We demonstrate that by properly adjusting the doping density in the JNT, a near ideal statistical variability and electrical performance can be achieved, which can pave the way for the continuation of scaling in silicon CMOS technology.

机译：采用基于非平衡绿色函数（NegF）形式主义的三维量子模拟研究了随机掺杂剂波动对N沟道硅结纳米线晶体管（JNT）的电特性统计变异的影响。已经考虑使用2×10（19），6×10（19）和1×10（20）cm（-3）的平均随机分布的主体掺杂密度，用于采用具有5,10和15的栅极长度的JNT的原子模型纳米。我们证明，通过适当地调节JNT中的掺杂密度，可以实现近乎理想的统计变异性和电气性能，这可以铺平硅CMOS技术中的缩放的延续。

著录项

来源
《Nanotechnology》 |2018年第2期|共7页
作者
Akhavan N. D.; Umana-Membreno G. A.; Gu R.; Antoszewski J.; Faraone L.;
展开▼
作者单位

Univ Western Australia Sch Elect Elect &

Comp Engn Perth WA 6009 Australia;

Univ Western Australia Sch Elect Elect &

Comp Engn Perth WA 6009 Australia;

Univ Western Australia Sch Elect Elect &

Comp Engn Perth WA 6009 Australia;

Univ Western Australia Sch Elect Elect &

Comp Engn Perth WA 6009 Australia;

Univ Western Australia Sch Elect Elect &

Comp Engn Perth WA 6009 Australia;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
semiconductor devices; silicon nanowire transistors; quantum transport; field effect transistor; impurity scattering; junctionless nanowire transistor; random dopant fluctuations;

机译：半导体器件;硅纳米线晶体管;量子传输;场效应晶体管;杂质散射;无连接纳米线晶体管;随机掺杂剂波动;

相似文献

外文文献
中文文献
专利

1. Random dopant fluctuations and statistical variability in n-channel junctionless FETs [J] . Akhavan N. D., Umana-Membreno G. A., Gu R., Nanotechnology . 2018,第2期

机译：N沟道连接FET中随机掺杂剂波动及统计变异性
2. Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation [J] . Bae Min Soo, Yun Ilgu Semiconductor science and technology . 2020,第3期

机译：由于随机掺杂物波动，栅极功函数变化和氧化物厚度变化而引起的无结FinFET中工艺变化的影响
3. Role of quantum capacitance on the random dopant fluctuation induced threshold voltage variability in junctionless InGaAs FinFETs [J] . Nawaz S. K. Masum, Mallik Abhijit Solid-State Electronics . 2020,第Sepa期

机译：量子电容对无随机掺杂剂波动的作用在无连接Ingaas Finfet中的阈值电压变异性
4. Statistical variability in n-channel SOI FinFET in the presence of random discrete dopant [C] . Nurul Ezaila Alias, Rahimah Hassan, Zaharah Johari IEEE International Conference on Semiconductor Electronics . 2016

机译：在存在随机离散掺杂剂的情况下，n沟道SOI FinFET的统计可变性
5. Modeling random dopant fluctuation effects in nanoscale trigate MOSFETs. [D] . Ogden, Joshua. 2011

机译：对纳米级三栅MOSFET中的随机掺杂剂波动效应进行建模。
6. Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants [O] . Wen-Tsung Huang, Yiming Li 2015

机译：随机离散掺杂剂引起的具有固定顶鳍宽度的16nm栅极梯形体FinFET器件的电特性波动
7. Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs With Metal–Interlayer–Semiconductor Source/Drain Contact Structure [O] . Seung-Geun Jung, Hyun-Yong Yu 2019

机译：用金属层间半导体源/漏极接触结构对随机掺杂波动对N型接线FINFET的影响

Random dopant fluctuations and statistical variability in n-channel junctionless FETs

摘要

著录项

相似文献

相关主题

期刊订阅