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Contamination-free Ge-based graphene as revealed by graphene enhanced secondary ion mass spectrometry (GESIMS)

机译：由石墨烯增强的二次离子质谱（GESIMS）揭示的无污染的GE石墨烯

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摘要

In this study, we demonstrate that graphene grown on Ge does not contain any copper contamination, and identify some of the errors affecting the accuracy of commonly used measurement methods. Indeed, one of these, the secondary ion mass spectrometry (SIMS) technique, reveals copper contamination in Ge-based graphene but does not take into account the effect of the presence of the graphene layer. We have shown that this layer increases negative ionization significantly, and thus yields false results, but also that the graphene enhances, by an order of two, the magnitude of the intensity of SIMS signals when compared with a similar graphene-free sample, enabling much better detection limits. This forms the basis of a new measurement procedure, graphene enhanced SIMS (GESIMS) (pending European patent application no. EP 16461554.4), which allows for the precise estimation of the realistic distribution of dopants and contamination in graphene. In addition, we present evidence that the GESIMS effect leads to unexpected mass interferences with double-ionized species, and that these interferences are negligible in samples without graphene. The GESIMS method also shows that graphene transferred from Cu results in increased copper contamination.
机译：在这项研究中，我们证明GE上生长的石墨烯不含任何铜污染，并确定影响常用测量方法精度的一些误差。实际上，其中之一，二次离子质谱（SIMS）技术，揭示了基于Ge的石墨烯中的铜污染，但不考虑石墨烯层的存在的效果。我们已经表明，该层显着提高了负电离，因此产生了假的结果，但是石墨烯的增强量为2，与类似的石墨烯样品相比，SIMS信号的强度的大小更好的检测限制。这构成了一种新的测量程序，石墨烯增强的SIMS（GESIM）（未决欧洲专利申请No.EP 16461554.4），这允许精确地估计掺杂剂和石墨烯中污染的逼真分布。此外，我们介绍了径床效应导致与双电离物种的意外的质量干扰，并且这些干扰在没有石墨烯的样品中可以忽略不计。 Gesims方法还表明，从Cu转移的石墨烯导致铜污染增加。

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